Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- N° de stock RS:
- 279-9920
- Référence fabricant:
- SIHK155N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,16 €
(TVA exclue)
6,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 2 000 unité(s) expédiée(s) à partir du 07 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 5,16 € |
| 50 - 99 | 5,05 € |
| 100 - 249 | 4,96 € |
| 250 - 999 | 4,84 € |
| 1000 + | 4,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9920
- Référence fabricant:
- SIHK155N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
Vishay SIHK Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHK155N60E-T1-GE3
This MOSFET is a high-voltage, N-channel switching transistor designed for surface-mount power applications. It operates in enhancement mode and is suitable for electronic systems requiring substantial drain current and elevated power handling across a wide temperature range. The device is intended for mounting in a compact PowerPAK 10x12 package and conforms to RoHS requirements.
Features and Benefits:
• 600V rating enables use in high-voltage power stages
• 19A continuous drain current supports sustained load currents
• 156W maximum power dissipation manages heavy switching duty
• 0.158Ω low Rds(on) reduces conduction losses
• 36nC typical gate charge facilitates predictable switching performance
• 30V maximum gate drive permits standard logic-level gate control
• 19A continuous drain current supports sustained load currents
• 156W maximum power dissipation manages heavy switching duty
• 0.158Ω low Rds(on) reduces conduction losses
• 36nC typical gate charge facilitates predictable switching performance
• 30V maximum gate drive permits standard logic-level gate control
Applications
• Suitable for SMPS primary-side switching in power supplies
• Ideal for industrial motor drive inverter stages
• Used for high-voltage DC-DC conversion modules
• Can be used for quasi-relays and solid-state switching arrays
• Suitable for telecoms and industrial power distribution equipment
• Ideal for industrial motor drive inverter stages
• Used for high-voltage DC-DC conversion modules
• Can be used for quasi-relays and solid-state switching arrays
• Suitable for telecoms and industrial power distribution equipment
What thermal range can it withstand in demanding installations?
It is specified to operate from -55°C up to 150°C, allowing deployment in harsh industrial environments.
What mounting considerations are relevant for thermal management?
The surface-mount PowerPAK 10x12 format permits close heatsinking and low thermal-resistance PCB layouts when paired with appropriate copper pour and vias.
How many pins are present and how does that affect PCB layout?
The device uses an 8-pin configuration, enabling dedicated drain, source and gate connections for compact high-current routing.
What is the typical forward voltage and where is it relevant?
The forward voltage is 1.2V, which is pertinent for body-diode conduction scenarios and reverse-recovery performance during switching transients.
Liens connexes
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