Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

N° de stock RS:: 279-9919
Référence fabricant:: SIHK155N60E-T1-GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

Sous-total (1 bobine de 2000 unités)*

5 042,00 €

(TVA exclue)

6 100,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
2000 +	2,521 €	5 042,00 €

*Prix donné à titre indicatif

N° de stock RS:: 279-9919
Référence fabricant:: SIHK155N60E-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK155N60E-T1-GE3

Vishay SIHK Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHK155N60E-T1-GE3

This MOSFET is a high-voltage, N-channel switching transistor designed for surface-mount power applications. It operates in enhancement mode and is suitable for electronic systems requiring substantial drain current and elevated power handling across a wide temperature range. The device is intended for mounting in a compact PowerPAK 10x12 package and conforms to RoHS requirements.

Features and Benefits:

• 600V rating enables use in high-voltage power stages
• 19A continuous drain current supports sustained load currents
• 156W maximum power dissipation manages heavy switching duty
• 0.158Ω low Rds(on) reduces conduction losses
• 36nC typical gate charge facilitates predictable switching performance
• 30V maximum gate drive permits standard logic-level gate control

Applications

• Suitable for SMPS primary-side switching in power supplies
• Ideal for industrial motor drive inverter stages
• Used for high-voltage DC-DC conversion modules
• Can be used for quasi-relays and solid-state switching arrays
• Suitable for telecoms and industrial power distribution equipment

What thermal range can it withstand in demanding installations?

It is specified to operate from -55°C up to 150°C, allowing deployment in harsh industrial environments.

What mounting considerations are relevant for thermal management?

The surface-mount PowerPAK 10x12 format permits close heatsinking and low thermal-resistance PCB layouts when paired with appropriate copper pour and vias.

How many pins are present and how does that affect PCB layout?

The device uses an 8-pin configuration, enabling dedicated drain, source and gate connections for compact high-current routing.

What is the typical forward voltage and where is it relevant?

The forward voltage is 1.2V, which is pertinent for body-diode conduction scenarios and reverse-recovery performance during switching transients.