Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- N° de stock RS:
- 268-8311
- Référence fabricant:
- SIHK105N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
11,54 €
(TVA exclue)
13,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 5,77 € | 11,54 € |
| 50 - 98 | 5,19 € | 10,38 € |
| 100 - 248 | 4,24 € | 8,48 € |
| 250 - 998 | 4,16 € | 8,32 € |
| 1000 + | 3,21 € | 6,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8311
- Référence fabricant:
- SIHK105N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 24A Drain Current - SIHK105N60E-T1-GE3
This MOSFET is a high-voltage N-channel enhancement device designed for power switching in industrial and electronic systems. It operates across a broad temperature range and is intended for PCB mounting in applications that require high drain-source voltage handling and substantial current capability. The component is supplied in a Compact PowerPAK package suitable for dense board layouts.
Features and Benefits:
• 650V maximum drain-source voltage enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.1Ω Rds(on) reduces conduction losses and improves efficiency • 132W power dissipation allows sustained power handling in thermal designs • 53nC typical gate charge at Vgs limits switching energy for Faster transitions • 150°C maximum operating temperature permits elevated thermal operating envelopes
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive inverter stages • Used for switched-mode power supply primary-side switches • Can be used for photovoltaic inverter power stages • Suitable for power-factor-correction circuits
What is the allowable gate drive voltage for safe operation?
The gate-source voltage must not exceed 30V to prevent gate-oxide overstress and ensure reliable switching.
How does the device behave at low temperatures in cold-start conditions?
It is specified to operate down to -55°C, maintaining enhancement-mode conduction characteristics at sub-zero temperatures.
What package and pin configuration aid PCB assembly?
The component is supplied in a PowerPAK 10x12 package with eight pins, facilitating automated soldering and thermal contact on PCB layouts.
How does the typical gate charge affect switching design?
A 53nC gate charge at the rated gate drive influences gate-driver sizing and switching losses, informing selection of driver current capability.
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