Vishay SIHK N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

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N° de stock RS:
268-8311
Référence fabricant:
SIHK105N60E-T1-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

53nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

132W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

Pays d'origine :
CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60E-T1-GE3


This MOSFET is a high-voltage N-channel transistor designed for power switching on printed circuit boards. It operates across a wide temperature span for industrial environments and is suited to applications requiring significant power handling and elevated drain-source voltage resilience. The device is mounted in a low-profile PowerPAK package to facilitate thermal management on PCB assemblies.

Features and Benefits:


• 650V drain-source rating enables high-voltage switching
• 24A continuous drain current supports heavy load currents
• 0.1Ω low Rds(on) reduces conduction losses
• 132W maximum dissipation improves thermal headroom
• 53nC typical gate charge balances switching speed and drive effort
• Vgs 30V gate limit allows robust gate-drive ranges

Applications


• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive inverters requiring high voltage
• Can be used for power factor correction circuits
• Suitable for utility and renewable-energy interface electronics

What temperature range can it reliably operate within?


The device is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.

What packaging and mounting considerations apply for thermal performance?


It is supplied in a PowerPAK 10x12 package intended for PCB mounting, which aids heat dissipation when paired with appropriate copper planes and thermal vias.

How does gate charge affect driver selection?


With a typical total gate charge of 53nC, drivers must supply sufficient current for desired switching speeds while managing gate-drive losses.

What is the maximum allowable gate-source voltage?


The maximum Vgs is 30V, so gate-drive circuits should be designed to stay within that limit to avoid device stress.

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