Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

N° de stock RS:: 268-8312
Référence fabricant:: SIHK125N60EF-T1GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

Sous-total (1 bobine de 2000 unités)*

4 320,00 €

(TVA exclue)

5 220,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 16 octobre 2026

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Unité	Prix par unité	la bobine*
2000 +	2,16 €	4 320,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8312
Référence fabricant:: SIHK125N60EF-T1GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	132W
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 132W
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK125N60EF-T1GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHK125N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control on printed circuit boards. It suits demanding electrical and electronic systems where elevated drain-to-source voltage handling and substantial current capability are required. The device is supplied in a Compact PowerPAK 10x12 package for PCB mounting and is intended for applications that operate across a wide temperature range.

Features and Benefits:

• 650V drain-to-source rating enables high-voltage switching
• 21A continuous drain current supports heavy load duty
• 0.125Ω Rds(on) reduces conduction losses at operating current
• 45nC typical gate charge allows efficient gate-drive management
• 132W power dissipation permits substantial thermal loading

Applications

• Suitable for industrial motor drive inverter stages
• Ideal for high-voltage power supplies in automation systems
• Used for switch-mode power conversion in electrical equipment
• Can be used for medium-power traction and conversion modules

What voltage stress can it withstand in switching circuits?

It can handle up to 650V between drain and source, making it appropriate for high-voltage topologies.

How does gate-charge affect drive design?

A typical gate charge of 45nC informs gate-driver current and switching-loss calculations during transition events.

What thermal extremes can it operate within?

Operational limits span from -55°C at the low end to 150°C at the high end for junction temperatures.

How many pins and what mounting style does it use?

It is an 8-pin device intended for PCB mounting in a PowerPAK 10x12 footprint.

What is the maximum permissible gate voltage?

The gate may be driven up to 30V relative to source without exceeding its gate‑source rating.