Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

N° de stock RS:: 268-8312
Référence fabricant:: SIHK125N60EF-T1GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

Sous-total (1 bobine de 2000 unités)*

4 320,00 €

(TVA exclue)

5 220,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 08 mars 2027

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Unité	Prix par unité	la bobine*
2000 +	2,16 €	4 320,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8312
Référence fabricant:: SIHK125N60EF-T1GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	132W
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 132W
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK125N60EF-T1GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHK125N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control on printed circuit boards. It operates across a wide thermal range and is intended for applications requiring robust voltage handling and moderate current capacity in a PCB-mounted PowerPAK package.

Features and Benefits:

• 650V drain capability for high-voltage switching
• 21A continuous drain current for steady power delivery
• 0.125Ω low Rds(on) to reduce conduction losses
• 132W power dissipation for thermal headroom
• 45nC typical gate charge for predictable switching energy
• 30V gate-source rating for flexible gate drive levels

Applications

• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor-drive front ends
• Used with isolated gate drivers in power converters
• Can be used for power-factor-correction stages
• Suitable for inverter circuits in renewable-energy systems

What package is provided for PCB assembly and thermal management?

The component is supplied in a PowerPAK 10x12 surface-mount package designed for PCB mounting to assist heat transfer to the board and facilitate solder-based thermal paths.

What thermal extremes can the device withstand in operation?

It is specified to function from -55°C up to 150°C, enabling use in environments with substantial temperature variation.

How does the device behave as a gate-driven switch?

It is an enhancement-mode N-channel MOSFET that requires a positive gate-source voltage up to its 30V limit to conduct, and its typical gate charge of 45nC informs switching-energy calculations.

Are there any environmental or regulatory attributes noted?

The device complies with RoHS requirements for restricted substances, aligning with standard electronic component environmental directives.