Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

N° de stock RS:: 268-8308
Référence fabricant:: SIHK105N60EF-T1GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

Sous-total (1 bobine de 2000 unités)*

5 280,00 €

(TVA exclue)

6 380,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 +	2,64 €	5 280,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8308
Référence fabricant:: SIHK105N60EF-T1GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.105Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	142W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.105Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 142W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK105N60EF-T1GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60EF-T1GE3

This MOSFET is a high-voltage N-channel enhancement device designed for power switching in demanding PCB-mounted systems. It operates across a wide temperature range and is intended for applications requiring substantial drain current and elevated blocking voltage while conforming to RoHS environmental standards.

Features and Benefits:

• 650V drain rating enables high-voltage switching capability
• 24A continuous drain current supports heavy-load operation
• 0.105Ω Rds(on) reduces conduction losses under load
• 142W power dissipation allows high-power handling
• 51nC typical gate charge minimises switching energy losses
• 30V gate rating permits wide gate-drive flexibility

Applications

• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor-drive front ends
• Used with switch-mode power supplies for energy-efficient switching
• Can be used for solid-state relays and protection circuits
• Suitable for telecom power distribution modules

What package format does this device use for PCB assembly?

It is supplied in a PowerPAK 10x12 package intended for surface-mount PCB attachment, providing a compact footprint and thermal relief for high-power layouts.

How does the device cope with extreme ambient temperatures?

The device is specified to operate from -55°C up to 150°C, covering wide industrial thermal conditions without derating below those limits.

What gate-drive considerations should be observed for reliable operation?

Gate excursions must be limited to a maximum of 30V to prevent gate oxide stress

appropriate gate resistances and drive circuitry are recommended to manage the 51nC charge during switching.

Is this device suitable for automotive qualification?

It is not designated as automotive-grade, so it should not be assumed to meet automotive-specific qualification requirements.