Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

N° de stock RS:: 268-8306
Référence fabricant:: SIHK085N60EF-T1GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

Sous-total (1 bobine de 2000 unités)*

7 714,00 €

(TVA exclue)

9 334,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

2 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
2000 +	3,857 €	7 714,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8306
Référence fabricant:: SIHK085N60EF-T1GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.085Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	184W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.085Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 184W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK085N60EF-T1GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHK085N60EF-T1GE3

This MOSFET is a high-voltage switching transistor designed for power conversion and switching applications where elevated voltage and thermal endurance are required. It is a PCB-mounted, N-channel enhancement device optimised for medium-current, high-voltage circuits in demanding thermal environments. The component conforms to RoHS directives and is intended for engineers specifying rugged discrete power transistors for industrial and power-electronics designs.

Features and Benefits:

• 650V maximum drain voltage delivers wide high-voltage headroom
• 30A continuous drain current supports substantial load currents
• 0.085 Ω Rds(on) reduces conduction losses in power paths
• 184W maximum power dissipation enables sustained high-power operation
• 63 nC typical gate charge allows predictable switching-drive requirements
• Gate-source limit ±30V protects gate-drive margin during transients

Applications

• Suitable for high-voltage DC-DC converters in industrial systems
• Used for phase-leg switches in motor drive inverter stages
• Ideal for primary-side switchers in SMPS topologies
• Can be used for load switching in battery management systems
• Used with discrete power stages requiring compact package density

What temperature extremes can the device tolerate during operation?

It is specified to operate across a broad range from -55 °C up to 150 °C, covering low-temperature starts and elevated junction conditions.

Which package type should I expect for PCB assembly and thermal management?

It is supplied in a PowerPAK 10x12 package optimised for PCB mounting to aid heat spreading and low-inductance layouts.

What gate-drive considerations are implied by the gate charge value?

The typical 63 nC gate charge requires a driver capable of sourcing and sinking sufficient current to meet desired switching speeds while managing switching losses.

How does the channel configuration affect circuit design choices?

Being an N-channel enhancement device, it necessitates appropriate gate-drive polarity and is typically used on the low side or as a high-side switch with level shifting.