Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- N° de stock RS:
- 268-8316
- Référence fabricant:
- SIHK185N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
9,84 €
(TVA exclue)
11,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 4,92 € | 9,84 € |
| 50 - 98 | 4,42 € | 8,84 € |
| 100 - 248 | 3,625 € | 7,25 € |
| 250 - 998 | 3,55 € | 7,10 € |
| 1000 + | 2,78 € | 5,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8316
- Référence fabricant:
- SIHK185N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.193Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.193Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHK185N60EF-T1GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in PCB-mounted assemblies. It operates across a wide temperature span and complies with RoHS standards, making it suitable for industrial electronic systems requiring elevated voltage handling and thermal resilience.
Features and Benefits:
• 650V drain rating enabling high-voltage switching capability
• 16A continuous drain current supporting substantial load currents
• 114W power dissipation permitting sustained power handling
• 0.193Ω Rds(on) reducing conduction losses under load
• 32nC typical gate charge allowing predictable switching performance
• 30V maximum gate-source voltage providing robust gate tolerance
• 16A continuous drain current supporting substantial load currents
• 114W power dissipation permitting sustained power handling
• 0.193Ω Rds(on) reducing conduction losses under load
• 32nC typical gate charge allowing predictable switching performance
• 30V maximum gate-source voltage providing robust gate tolerance
Applications
• Suitable for switching power supplies in high-voltage designs
• Ideal for industrial motor drives and inverter stages
• Used with renewable energy converters handling elevated voltages
• Can be used for power factor correction circuits on PCBs
• Suitable for general high-power transistor replacement in assemblies
• Ideal for industrial motor drives and inverter stages
• Used with renewable energy converters handling elevated voltages
• Can be used for power factor correction circuits on PCBs
• Suitable for general high-power transistor replacement in assemblies
What thermal range can it tolerate in demanding environments?
It is specified to operate from -55°C up to 150°C, accommodating both low-temperature storage and high-temperature operating conditions.
What mounting style does it require for PCB integration?
The device is supplied in a PowerPAK 10x12 package intended for PCB mounting to facilitate low-inductance connections and compact layouts.
How many pins are available for connection and grounding schemes?
It uses an 8-pin configuration which allows separation of gate, drain and source connections for flexible board routing.
Is it suitable for automotive-specific standards?
It is not classified to automotive standards and should be evaluated against vehicle-specific requirements before use.
Liens connexes
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