Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- N° de stock RS:
- 268-8316
- Référence fabricant:
- SIHK185N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
9,84 €
(TVA exclue)
11,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 4,92 € | 9,84 € |
| 50 - 98 | 4,42 € | 8,84 € |
| 100 - 248 | 3,625 € | 7,25 € |
| 250 - 998 | 3,55 € | 7,10 € |
| 1000 + | 2,78 € | 5,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8316
- Référence fabricant:
- SIHK185N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.193Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.193Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 16A Continuous Drain Current - SIHK185N60EF-T1GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching on PCB assemblies. It operates across a wide temperature range and suits industrial control and power-conversion environments where robust voltage handling and thermal tolerance are required.
Features and Benefits:
• 650V drain voltage enables high-voltage switching applications • 16A continuous drain current supports substantial load currents • 0.193Ω low Rds(on) reduces conduction losses and heat generation • 114W power dissipation allows sustained power handling • 32nC typical gate charge supports moderately fast switching speeds • 30V maximum gate drive permits flexible gate-control designs
Applications
• Suitable for high-voltage power converters and inverters • Ideal for switch-mode power supplies in industrial systems • Used for motor drive switching in automation equipment • Can be used for lighting ballast and electronic transformer control
What thermal extremes can it tolerate in system design?
It is specified to operate down to -55°C and up to 150°C, allowing use in environments with wide ambient temperature variation.
What mounting considerations are needed on a PCB?
It is intended for PCB mounting in a PowerPAK 10x12 package with eight pins, so PCB layout should provide adequate thermal vias and copper area for heat spreading.
How should gate drive be limited to protect the device?
The gate must not exceed ±30V relative to the source, so gate-drive circuitry should include clamping or regulation to prevent overvoltage.
What charge characteristic affects gate-driver selection?
The typical gate charge is 32nC at the specified gate bias, informing the required drive current and switching losses for gate-driver sizing.
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