Vishay SIHK N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- N° de stock RS:
- 268-8304
- Référence fabricant:
- SIHK045N60EF-T1GE3
- Fabricant:
- Vishay
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 268-8304
- Référence fabricant:
- SIHK045N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHK | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.052Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHK | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.052Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Liens connexes
- Vishay SIHK N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- Vishay SiH N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- Vishay SIHK N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3
- Vishay SIHK N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3
- Vishay SIHK N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3
- Vishay SIHK N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3
- Vishay SIHK N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60EF-T1GE3
- Vishay SiH N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SIHK045N60E-T1GE3