Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

N° de stock RS:: 268-8310
Référence fabricant:: SIHK105N60E-T1-GE3
Fabricant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

Sous-total (1 bobine de 2000 unités)*

5 282,00 €

(TVA exclue)

6 392,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 +	2,641 €	5 282,00 €

*Prix donné à titre indicatif

N° de stock RS:: 268-8310
Référence fabricant:: SIHK105N60E-T1-GE3
Fabricant:: Vishay

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Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK105N60E-T1-GE3

Pays d'origine :: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60E-T1-GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching on printed circuit boards. It operates across a wide temperature span for industrial environments and is suited to applications requiring significant power handling and elevated drain-source voltage resilience. The device is mounted in a low-profile PowerPAK package to facilitate thermal management on PCB assemblies.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 24A continuous drain current supports heavy load currents
• 0.1Ω low Rds(on) reduces conduction losses
• 132W maximum dissipation improves thermal headroom
• 53nC typical gate charge balances switching speed and drive effort
• Vgs 30V gate limit allows robust gate-drive ranges

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive inverters requiring high voltage
• Can be used for power factor correction circuits
• Suitable for utility and renewable-energy interface electronics

What temperature range can it reliably operate within?

The device is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.

What packaging and mounting considerations apply for thermal performance?

It is supplied in a PowerPAK 10x12 package intended for PCB mounting, which aids heat dissipation when paired with appropriate copper planes and thermal vias.

How does gate charge affect driver selection?

With a typical total gate charge of 53nC, drivers must supply sufficient current for desired switching speeds while managing gate-drive losses.

What is the maximum allowable gate-source voltage?

The maximum Vgs is 30V, so gate-drive circuits should be designed to stay within that limit to avoid device stress.