Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

N° de stock RS:: 228-2871
Référence fabricant:: SiHH080N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

Sous-total (1 bobine de 3000 unités)*

7 092,00 €

(TVA exclue)

8 580,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 18 janvier 2027

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Unité	Prix par unité	la bobine*
3000 +	2,364 €	7 092,00 €

*Prix donné à titre indicatif

N° de stock RS:: 228-2871
Référence fabricant:: SiHH080N60E-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	32A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK
	Series	E
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Power Dissipation Pd	184W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 32A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK
	Series E
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Power Dissipation Pd 184W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHH080N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 32A Maximum Continuous Drain Current - SiHH080N60E-T1-GE3

This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control tasks. It operates across a wide ambient range and is intended for applications requiring substantial current handling, efficient switching and compact PCB mounting. The device is manufactured to meet RoHS environmental standards and is supplied in a PowerPAK package for low-profile assembly.

Features and Benefits:

• 650V drain capability enables high-voltage applications
• 32A continuous drain current supports heavy load handling
• 70mΩ Rds(on) reduces conduction losses under load
• 42nC typical gate charge allows faster switching transitions
• 184W power dissipation manages thermal energy in operation
• Vgs limit of 30V permits standard gate‑drive voltages

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used with PFC circuits requiring robust switches
• Can be used for renewable‑energy inverter sections
• Suitable for compact surface‑mount power assemblies

What temperature extremes can the device tolerate in operation?

It is specified to operate from -55°C up to 150°C, accommodating harsh thermal environments and elevated junction temperatures.

How does the package assist with PCB assembly and thermal behaviour?

The PowerPAK surface‑mount package offers a low‑profile footprint for automated placement and provides a thermal path suited to copper heatsinking on the PCB.

What gate‑drive considerations are required for reliable switching?

Drive circuitry should respect the ±30V gate‑source rating and be sized to supply the typical 42nC gate charge for desired switching speed and EMI control.

Is this device appropriate for automotive systems?

It is not defined as an automotive‑standard device, so designers should verify qualification requirements before using it in certified automotive programmes.