Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3
- N° de stock RS:
- 268-8309
- Référence fabricant:
- SIHK105N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
11,64 €
(TVA exclue)
14,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 2 050 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 5,82 € | 11,64 € |
| 50 - 98 | 5,23 € | 10,46 € |
| 100 - 248 | 4,28 € | 8,56 € |
| 250 - 998 | 4,195 € | 8,39 € |
| 1000 + | 3,23 € | 6,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8309
- Référence fabricant:
- SIHK105N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHK | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHK | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHK105N60EF-T1GE3
This MOSFET is a high-voltage N-channel semiconductor switch designed for power conversion and switching duties in industrial electronics. It operates across a wide temperature range and mounts to printed circuit boards in an 8‑pin package, delivering a balance of switching capability and thermal handling suitable for demanding electrical control environments.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 24A continuous drain current supports substantial load currents • 0.105Ω Rds(on) reduces conduction losses during operation • 51nC gate charge allows controlled switching performance • 142W power dissipation assists in high-power handling on PCB • ±30V gate tolerance permits broad gate-drive margin
Applications
• Suitable for industrial motor-drive inverter stages • Ideal for high-voltage power supplies and converters • Used for DC-DC conversion in automation systems • Can be used for switch-mode power controllers in machinery • Suitable for power switching in electrical distribution units
What thermal extremes can this device tolerate during operation?
It is rated to function from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.
How many pins and what mounting style does it require on a board?
It is provided in an 8‑pin configuration intended for PCB mounting in a PowerPAK 10x12 footprint.
What kind of gate-drive constraints should be observed?
The device accepts up to 30V between gate and source, so gate-drive circuitry should remain within that limit to avoid damage.
How does the device meet environmental material restrictions?
It conforms to RoHS requirements, indicating restricted hazardous substance compliance.
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