Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3
- N° de stock RS:
- 256-7437
- Référence fabricant:
- SIZ260DT-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 5 unités)*
8,46 €
(TVA exclue)
10,235 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 2 675 unité(s) expédiée(s) à partir du 26 juin 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,692 € | 8,46 € |
| 50 - 95 | 1,636 € | 8,18 € |
| 100 - 245 | 1,384 € | 6,92 € |
| 250 - 995 | 1,356 € | 6,78 € |
| 1000 + | 0,996 € | 4,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7437
- Référence fabricant:
- SIZ260DT-T1-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | SIZ260DT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0247Ω | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAIR 3 x 3S | ||
Series SIZ260DT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0247Ω | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
Vishay SIZ260DT Series MOSFET, 80V Drain Source Voltage, 8.9A Continuous Drain Current - SIZ260DT-T1-GE3
Features and Benefits:
• 8.9A continuous current allows sustained load driving
• 0.0247Ω Rds(on) reduces conduction losses
• 6.3nC typical gate charge supports fast switching
• 33W power dissipation permits higher power handling
• ±20V gate tolerance accommodates varied gate-drive ranges
Applications
• Ideal for motor-driver stages in industrial drives
• Used for power switching in control modules
• Can be used for load switching in battery management
• Suitable for Compact SMD power assemblies in electrical systems
What temperature extremes can it withstand during operation?
How does the package form affect PCB layout?
Is this device appropriate for automotive applications?
What are the benefits of the devices pin count for circuit design?
Liens connexes
- Vishay Type N-Channel MOSFET 80 V PowerPAIR 3 x 3S
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ270DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay Type N-Channel MOSFET 30 V PowerPAIR SIZ918DT-T1-GE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S
