Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3

N° de stock RS:: 256-7436
Référence fabricant:: SIZ260DT-T1-GE3
Fabricant:: Vishay

Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3

Sous-total (1 bobine de 3000 unités)*

1 725,00 €

(TVA exclue)

2 088,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 14 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,575 €	1 725,00 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7436
Référence fabricant:: SIZ260DT-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.9A
	Maximum Drain Source Voltage Vds	80V
	Series	SIZ260DT
	Package Type	PowerPAIR 3 x 3S
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0247Ω
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	33W
	Typical Gate Charge Qg @ Vgs	6.3nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Width	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.9A
	Maximum Drain Source Voltage Vds 80V
	Series SIZ260DT
	Package Type PowerPAIR 3 x 3S
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0247Ω
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 33W
	Typical Gate Charge Qg @ Vgs 6.3nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Width 3.3mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIZ260DT-T1-GE3

Vishay SIZ260DT Series MOSFET, 33W Maximum Power Dissipation, 80V Maximum Drain Source Voltage - SIZ260DT-T1-GE3

This MOSFET is a surface-mount N-channel transistor designed for power switching in compact electronics. It operates across a wide temperature span and is suitable for applications requiring moderate voltage handling and high continuous current capability. The device is RoHS compliant and supplied in a compact PowerPAIR 3x3S package for dense board layouts.

Features and Benefits:

• 80V drain-source rating enables medium-voltage switching
• 8.9A continuous drain current supports high-load circuits
• 0.0247Ω Rds(on) reduces conduction losses for efficiency
• 6.3nC typical gate charge allows faster gate-drive response
• 33W maximum power dissipation manages thermal stress
• 20V gate-source limit provides wide gate-drive margin

Applications

• Suitable for DC-DC converter switching stages
• Used for motor drive half-bridge configurations
• Ideal for power management in telecoms equipment
• Can be used for synchronous rectification in SMPS
• Suitable for high-current load switches on compact boards

What package footprint should I allow for mounting?

The device is supplied in a PowerPAIR 3x3S surface-mount package with a nominal 3.3mmx3.3mm footprint and eight pins, so design pads must match that compact outline.

How does it behave across temperature extremes?

It is specified to operate from -55°C up to +150°C, maintaining conduction and switching characteristics within that temperature range.

What gate drive constraints must be observed?

The maximum permissible gate-source voltage is 20V

gate-drive circuits should be designed to keep Vgs within this limit to prevent device stress.

How should thermal management be considered in designs?

With a 33W maximum power dissipation, adequate PCB copper, thermal vias or heatsinking should be incorporated to keep junction temperature within safe limits.