Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3
- N° de stock RS:
- 200-6852
- Référence fabricant:
- SiZ240DT-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 692,00 €
(TVA exclue)
2 046,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 05 juillet 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,564 € | 1 692,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 200-6852
- Référence fabricant:
- SiZ240DT-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00805Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00805Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.
TrenchFET Gen IV power MOSFETs
Integrated MOSFET half-bridge power stage
100 % Rg and UIS tested
Optimized Qgs/Qgs ratio improves switching characteristics
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