Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3
- N° de stock RS:
- 256-7377
- Référence fabricant:
- SI5936DU-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
6,07 €
(TVA exclue)
7,345 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,214 € | 6,07 € |
| 50 - 95 | 1,088 € | 5,44 € |
| 100 - 245 | 0,85 € | 4,25 € |
| 250 - 995 | 0,828 € | 4,14 € |
| 1000 + | 0,552 € | 2,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7377
- Référence fabricant:
- SI5936DU-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI5936DU | |
| Package Type | PowerPAK ChipFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 10.4W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Height | 0.85mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI5936DU | ||
Package Type PowerPAK ChipFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 10.4W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Height 0.85mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3
This MOSFET is a surface-mount N-channel switching transistor designed for power-management duties in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring efficient low-voltage switching and heat-handling in tight footprints.
Features and Benefits:
• 30V rating enables robust low-voltage switching capability
• 6A continuous current supports moderate power delivery
• 0.04 Ω Rds(on) minimises conduction losses
• 3.5 nC typical gate charge allows fast gate transitions
• 10.4W maximum dissipation handles significant thermal load
• 20V gate tolerance permits flexible drive-voltage choices
• 6A continuous current supports moderate power delivery
• 0.04 Ω Rds(on) minimises conduction losses
• 3.5 nC typical gate charge allows fast gate transitions
• 10.4W maximum dissipation handles significant thermal load
• 20V gate tolerance permits flexible drive-voltage choices
Applications
• Suitable for DC-DC converter output stage use
• Ideal for battery-management and power-path control
• Used with motor-driver stages for low-voltage motors
• Can be used for load switching in telecoms equipment
• Appropriate for compact power modules with height constraints
• Ideal for battery-management and power-path control
• Used with motor-driver stages for low-voltage motors
• Can be used for load switching in telecoms equipment
• Appropriate for compact power modules with height constraints
What package format should I plan for in PCB layout?
The device arrives in a PowerPAK ChipFET surface-mount style, so pad layouts must match a low-profile SMT footprint and allow thermal vias or copper pours for heat spread.
How does temperature affect continuous operation limits?
The component is specified to function from -55 °C to +150 °C, but thermal management is required to maintain power dissipation within ratings at elevated case temperatures.
What gate-drive considerations are there for switching performance?
Expect moderate gate-charge demand
driver capability should supply the typical 3.5 nC charge quickly to reduce switching losses while controlling dv/dt.
Is this suitable for automotive applications?
It is not designated to automotive standards, so it should not be used where automotive qualification is mandatory.
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