Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3
- N° de stock RS:
- 256-7377
- Référence fabricant:
- SI5936DU-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
5,29 €
(TVA exclue)
6,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 040 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,058 € | 5,29 € |
| 50 - 95 | 0,948 € | 4,74 € |
| 100 - 245 | 0,742 € | 3,71 € |
| 250 - 995 | 0,722 € | 3,61 € |
| 1000 + | 0,482 € | 2,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7377
- Référence fabricant:
- SI5936DU-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK ChipFET | |
| Series | SI5936DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Maximum Power Dissipation Pd | 10.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK ChipFET | ||
Series SI5936DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Maximum Power Dissipation Pd 10.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 0.85mm | ||
Automotive Standard No | ||
Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3
This MOSFET is a surface-mount N-channel transistor designed for switching and power-management roles in electronic systems. It operates as a low-resistance switch suitable for Compact board assemblies, offering a balance of current handling and voltage rating for a range of industrial control and power-conversion tasks.
Features and Benefits:
• 30V rating enables intermediate-voltage switching for control circuits • 6A continuous drain current supports moderate load currents • 0.04Ω Rds(on) reduces conduction losses during operation • 3.5nC typical gate charge for fast, low-energy switching • 10.4W power dissipation allows sustained thermal loading • +150°C maximum operating temperature tolerates high-temperature environments
Applications
• Suitable for motor drive gate-stage switching in automation systems • Ideal for DC-DC converters in industrial power supplies • Used for load switching in embedded control modules • Can be used for power-management in test and measurement equipment
What mounting format does it require on a PCB?
It uses a surface-mount package with an 8-pin footprint suited to automated assembly and Compact layouts.
How does the gate-charge Value affect drive requirements?
A 3.5nC typical gate charge means lower gate-drive energy and Faster transitions compared with higher-Qg devices, reducing gate-driver sizing and switching losses.
What environmental temperature range can it withstand?
It is rated for operation from -55°C up to +150°C, allowing use across wide thermal conditions without derating within that span.
What maximum gate-to-source voltage can I apply?
The device accepts up to 20V between gate and source, defining the allowable drive amplitude for safe operation.
What mechanical package type is provided for heat dissipation?
It is supplied in a PowerPAK ChipFET package that aids thermal transfer for higher dissipation levels.
Liens connexes
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET SI5448DU-T1-GE3
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3
- Vishay Si5418DU Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5418DU-T1-GE3
- Vishay Si5419DU Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
- Vishay Type N Type P 6 A, 20 V PowerPAK ChipFET SI5517DU-T1-GE3
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET