Références fabricant

Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET

N° de stock RS:: 256-7376
Référence fabricant:: SI5936DU-T1-GE3
Fabricant:: Vishay

Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET

Sous-total (1 bobine de 3000 unités)*

930,00 €

(TVA exclue)

1 140,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 30 octobre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
3000 +	0,31 €	930,00 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7376
Référence fabricant:: SI5936DU-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK ChipFET
	Series	SI5936DU
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.04Ω
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Power Dissipation Pd	10.4W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	0.85mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK ChipFET
	Series SI5936DU
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.04Ω
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Power Dissipation Pd 10.4W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 0.85mm
	Automotive Standard No

Datasheet - SI5936DU-T1-GE3

Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3

This MOSFET is a surface-mount N-channel transistor designed for switching and power-management roles in electronic systems. It operates as a low-resistance switch suitable for Compact board assemblies, offering a balance of current handling and voltage rating for a range of industrial control and power-conversion tasks.

Features and Benefits:

• 30V rating enables intermediate-voltage switching for control circuits • 6A continuous drain current supports moderate load currents • 0.04Ω Rds(on) reduces conduction losses during operation • 3.5nC typical gate charge for fast, low-energy switching • 10.4W power dissipation allows sustained thermal loading • +150°C maximum operating temperature tolerates high-temperature environments

Applications

• Suitable for motor drive gate-stage switching in automation systems • Ideal for DC-DC converters in industrial power supplies • Used for load switching in embedded control modules • Can be used for power-management in test and measurement equipment

What mounting format does it require on a PCB?

It uses a surface-mount package with an 8-pin footprint suited to automated assembly and Compact layouts.

How does the gate-charge Value affect drive requirements?

A 3.5nC typical gate charge means lower gate-drive energy and Faster transitions compared with higher-Qg devices, reducing gate-driver sizing and switching losses.

What environmental temperature range can it withstand?

It is rated for operation from -55°C up to +150°C, allowing use across wide thermal conditions without derating within that span.

What maximum gate-to-source voltage can I apply?

The device accepts up to 20V between gate and source, defining the allowable drive amplitude for safe operation.

What mechanical package type is provided for heat dissipation?

It is supplied in a PowerPAK ChipFET package that aids thermal transfer for higher dissipation levels.

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