Références fabricant

Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3

N° de stock RS:: 256-7376
Référence fabricant:: SI5936DU-T1-GE3
Fabricant:: Vishay

Vishay SI5936DU Type N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3

Sous-total (1 bobine de 3000 unités)*

1 071,00 €

(TVA exclue)

1 296,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 14 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,357 €	1 071,00 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7376
Référence fabricant:: SI5936DU-T1-GE3
Fabricant:: Vishay

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK ChipFET
	Series	SI5936DU
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.04Ω
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	10.4W
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Operating Temperature	+150°C
	Height	0.85mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK ChipFET
	Series SI5936DU
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.04Ω
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 10.4W
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Operating Temperature +150°C
	Height 0.85mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SI5936DU-T1-GE3

Vishay SI5936DU Series MOSFET, 30V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - SI5936DU-T1-GE3

This MOSFET is a surface-mount N-channel switching transistor designed for power-management duties in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring efficient low-voltage switching and heat-handling in tight footprints.

Features and Benefits:

• 30V rating enables robust low-voltage switching capability
• 6A continuous current supports moderate power delivery
• 0.04 Ω Rds(on) minimises conduction losses
• 3.5 nC typical gate charge allows fast gate transitions
• 10.4W maximum dissipation handles significant thermal load
• 20V gate tolerance permits flexible drive-voltage choices

Applications

• Suitable for DC-DC converter output stage use
• Ideal for battery-management and power-path control
• Used with motor-driver stages for low-voltage motors
• Can be used for load switching in telecoms equipment
• Appropriate for compact power modules with height constraints

What package format should I plan for in PCB layout?

The device arrives in a PowerPAK ChipFET surface-mount style, so pad layouts must match a low-profile SMT footprint and allow thermal vias or copper pours for heat spread.

How does temperature affect continuous operation limits?

The component is specified to function from -55 °C to +150 °C, but thermal management is required to maintain power dissipation within ratings at elevated case temperatures.

What gate-drive considerations are there for switching performance?

Expect moderate gate-charge demand

driver capability should supply the typical 3.5 nC charge quickly to reduce switching losses while controlling dv/dt.

Is this suitable for automotive applications?

It is not designated to automotive standards, so it should not be used where automotive qualification is mandatory.

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