Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3
- N° de stock RS:
- 256-7365
- Référence fabricant:
- SI5442DU-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 25 unités)*
9,45 €
(TVA exclue)
11,425 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 675 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 + | 0,378 € | 9,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7365
- Référence fabricant:
- SI5442DU-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK ChipFET | |
| Series | SI5442DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Typical Gate Charge Qg @ Vgs | 16.6nC | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 31W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK ChipFET | ||
Series SI5442DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Typical Gate Charge Qg @ Vgs 16.6nC | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 31W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 0.85mm | ||
Automotive Standard No | ||
Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3
This MOSFET is an N-channel switching transistor designed for high-current power-management roles in compact surface-mounted assemblies. It performs as a low-voltage power device suitable for DC-DC converters and synchronous switching topologies, operating across a wide ambient range for demanding thermal environments.
Features and Benefits:
• Very low on-resistance 0.0135Ω enabling reduced conduction losses
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading
Applications
• Suitable for synchronous buck converter outputs
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards
What thermal range can the device tolerate in deployment?
It is specified to operate from -55°C up to +150°C, accommodating both cold-start and high-temperature operating conditions.
How does the forward voltage affect efficiency in low-voltage systems?
The typical forward voltage of 1.2V across the intrinsic diode reduces dead-time losses and contributes to overall converter efficiency during synchronous operation.
Which package and mounting style are provided for board assembly?
The component is supplied in an 8‑pin PowerPAK ChipFET format intended for surface mounting to enable compact layout and effective thermal pathways.
Is the product compliant with material-restriction directives?
The component meets RoHS requirements, restricting certain hazardous substances in the device composition.
Liens connexes
- Vishay Type N-Channel MOSFET 20 V, 8-Pin PowerPAK ChipFET
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET SI5448DU-T1-GE3
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET SI5936DU-T1-GE3
- Vishay Si5418DU Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5418DU-T1-GE3
- Vishay Type N-Channel MOSFET 40 V, 8-Pin PowerPAK ChipFET
- Vishay Type N Type P 6 A, 20 V PowerPAK ChipFET SI5517DU-T1-GE3
- Vishay Si5419DU Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
- Vishay Type N-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET