Vishay SI5442DU N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3
- N° de stock RS:
- 256-7365
- Référence fabricant:
- SI5442DU-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 25 unités)*
9,45 €
(TVA exclue)
11,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 675 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 + | 0,378 € | 9,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7365
- Référence fabricant:
- SI5442DU-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK ChipFET | |
| Series | SI5442DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 16.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 31W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Height | 850μm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK ChipFET | ||
Series SI5442DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 16.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 31W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Height 850μm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3
This MOSFET is an N-channel switching transistor designed for high-current power-management roles in compact surface-mounted assemblies. It performs as a low-voltage power device suitable for DC-DC converters and synchronous switching topologies, operating across a wide ambient range for demanding thermal environments.
Features and Benefits:
• Very low on-resistance 0.0135Ω enabling reduced conduction losses
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading
• Continuous drain capability 25A supporting high-current rails
• Drain‑source withstand 20V allowing low-voltage power stages
• Gate tolerance up to 8V permitting flexible drive schemes
• Typical total gate charge 16.6nC for efficient switching control
• Power dissipation 31W enabling sustained thermal loading
Applications
• Suitable for synchronous buck converter outputs
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards
• Ideal for automotive‑grade power distribution modules
• Used for high-current load switching in industrial equipment
• Can be used for telecoms power supply stages
• Suitable for point‑of‑load regulation on compact boards
What thermal range can the device tolerate in deployment?
It is specified to operate from -55°C up to +150°C, accommodating both cold-start and high-temperature operating conditions.
How does the forward voltage affect efficiency in low-voltage systems?
The typical forward voltage of 1.2V across the intrinsic diode reduces dead-time losses and contributes to overall converter efficiency during synchronous operation.
Which package and mounting style are provided for board assembly?
The component is supplied in an 8‑pin PowerPAK ChipFET format intended for surface mounting to enable compact layout and effective thermal pathways.
Is the product compliant with material-restriction directives?
The component meets RoHS requirements, restricting certain hazardous substances in the device composition.
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