Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET

N° de stock RS:: 256-7364
Référence fabricant:: SI5442DU-T1-GE3
Fabricant:: Vishay

Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET

Sous-total (1 bobine de 3000 unités)*

660,00 €

(TVA exclue)

810,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 30 octobre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,22 €	660,00 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7364
Référence fabricant:: SI5442DU-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PowerPAK ChipFET
	Series	SI5442DU
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0135Ω
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	31W
	Maximum Gate Source Voltage Vgs	8V
	Typical Gate Charge Qg @ Vgs	16.6nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Height	0.85mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 20V
	Package Type PowerPAK ChipFET
	Series SI5442DU
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0135Ω
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 31W
	Maximum Gate Source Voltage Vgs 8V
	Typical Gate Charge Qg @ Vgs 16.6nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Height 0.85mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SI5442DU-T1-GE3

Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3

This MOSFET is a Compact N‑channel switching device intended for surface‑mount power applications. It is designed to handle significant continuous current while operating across a wide temperature range, making it suitable for industrial control and power‑conversion contexts where low conduction losses and Rapid switching are required.

Features and Benefits:

• 25A continuous current capability enables high‑current switching
• 0.0135 Ω Rds(on) minimises conduction losses in power paths
• 20V drain‑source rating supports low‑voltage power rails
• 16.6 nC typical gate charge allows efficient switching control
• 31W power dissipation supports sustained thermal load handling
• Vgs maximum 8V protects the gate from overvoltage during drive

Applications

• Suitable for motor‑drive power stages in automation systems
• Ideal for synchronous buck converters in DC-DC supplies
• Used for high‑current load switching in industrial controls
• Can be used for power management in battery‑powered equipment

What thermal operating limits should be considered during design?

The device is rated for operation from -55 °C up to +150 °C, so thermal management must ensure junction temperatures remain within this range under Peak power conditions.

How many pins and what mounting style does it require on a board?

It is supplied in an 8‑pin surface‑mount PowerPAK ChipFET package, so pad layout and soldering profiles should match an 8‑pin SMD footprint.

What gate‑drive constraints affect drive circuitry selection?

The gate must not be driven beyond a maximum of 8 V, so gate drivers and level shifting must limit Vgs within that threshold to avoid damage.

How should designers evaluate switching performance for high‑frequency use?

Use the typical gate‑charge Value of 16.6 nC at the specified gate voltage to calculate driver energy and switching losses when determining efficiency at the target switching frequencies.