Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- N° de stock RS:
- 239-8634
- Référence fabricant:
- SIHK045N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
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8,64 €
(TVA exclue)
10,45 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,64 € |
| 10 - 24 | 8,12 € |
| 25 - 49 | 7,34 € |
| 50 - 99 | 6,90 € |
| 100 + | 6,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8634
- Référence fabricant:
- SIHK045N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.043Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.043Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 48A Continuous Drain Current - SIHK045N60E-T1-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power management in demanding electrical systems. It operates across a wide temperature range and is intended for surface-mounted assemblies where automotive-level reliability and high continuous current handling are required.
Features and Benefits:
• 650V drain voltage enabling high-voltage switching applications • 48A continuous drain current supporting heavy current loads • 0.043Ω Rds(on) reducing conduction losses under load • 98nC typical gate charge allowing predictable drive requirements • 278W maximum power dissipation for substantial thermal handling • AEC-Q101 qualification meeting automotive stress screening needs
Applications
• Suitable for traction inverter and motor-control stages in vehicles • Ideal for high-voltage power converters in industrial automation • Used for DC-DC conversion in high-power electrical systems • Can be used for switch-mode power supplies in demanding environments
What gate drive considerations should I allow for?
Design gate drivers to deliver around the typical 98nC charge at the chosen Vgs to ensure switching speed meets system timing while limiting switching losses.
How should thermal management be approached on PCB assemblies?
Use the PowerPAK 10x12 surface package heat-spreading and provision for adequate copper area and vias to dissipate up to 278W under defined cooling conditions.
What voltage margins are appropriate for safety design?
Select system operating voltages well below the 650V maximum drain-source rating and limit gate excursions within the ±30V gate-source constraint.
Are there environmental temperature constraints for operation?
The device functions from -55°C up to +150°C junction temperature, so system cooling and derating must account for high-temperature operating points.
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