Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3

N° de stock RS:: 252-0267
Référence fabricant:: SIHK185N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3

Sous-total (1 bobine de 2000 unités)*

3 226,00 €

(TVA exclue)

3 904,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 +	1,613 €	3 226,00 €

*Prix donné à titre indicatif

N° de stock RS:: 252-0267
Référence fabricant:: SIHK185N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.16Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	114W
	Typical Gate Charge Qg @ Vgs	33nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Length	6.15mm
	Width	5.15mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.16Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 114W
	Typical Gate Charge Qg @ Vgs 33nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Length 6.15mm
	Width 5.15mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK185N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain-Source Voltage, 19A Continuous Drain Current - SIHK185N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for surface-mount applications in demanding electronic systems. It operates as an N-channel depletion device and is built to function across a wide ambient range, making it suitable for industrial and automotive contexts where robust switching at elevated voltages is required.

Features and Benefits:

• 650V drain capability enables high-voltage switching applications
• 19A continuous drain current supports substantial load currents
• 0.16Ω Rds(on) reduces conduction losses during operation
• 114W power dissipation permits high-power handling in compact layouts
• 33nC typical gate charge allows predictable switching energy budgeting
• ±20V gate tolerance preserves gate integrity under control transients

Applications

• Suitable for high-voltage power conversion stages
• Ideal for automotive electronic control modules requiring automotive-grade components
• Used for motor-drive front-end switching in industrial equipment
• Can be used for switch-mode power supplies in off-line converters
• Useful in power management circuits demanding surface-mount solutions

What thermal extremes can it withstand during deployment?

It is specified to operate down to -55°C and up to +150°C, accommodating severe ambient and junction temperature excursions.

How is it packaged for PCB assembly?

It is supplied in a PowerPAK 10x12 surface-mount package with eight pins to facilitate low-inductance PCB mounting.

Does it meet automotive qualification criteria?

The device conforms to the AEC-Q101 automotive standard, indicating suitability for vehicle electronic systems.

What channel and conduction mode does it use?

The transistor uses an N-type channel and operates in depletion mode for its switching behaviour.