Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

N° de stock RS:: 252-0267
Référence fabricant:: SIHK185N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12

Sous-total (1 bobine de 2000 unités)*

3 226,00 €

(TVA exclue)

3 904,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

2 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 +	1,613 €	3 226,00 €

*Prix donné à titre indicatif

N° de stock RS:: 252-0267
Référence fabricant:: SIHK185N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.16Ω
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	33nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	114W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Length	6.15mm
	Width	5.15mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.16Ω
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 33nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 114W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Length 6.15mm
	Width 5.15mm
	Automotive Standard AEC-Q101

Datasheet - SIHK185N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHK185N60E-T1-GE3

This power MOSFET is a high-voltage switching device for power conversion and control in demanding electronic systems. Designed for surface mounting in Compact assemblies, it operates as an N-channel depletion-mode transistor and is suitable for applications requiring elevated temperature endurance and robust voltage handling.

Features and Benefits:

• 650V drain rating enables high-voltage switching capability • 19A continuous drain current supports substantial load handling • 0.16Ω Rds(on) minimises conduction losses for improved efficiency • 33nC typical gate charge allows predictable switching energy • 114W power dissipation manages thermal load in Compact layouts • ±20V gate tolerance simplifies gate-drive design and protection

Applications

• Suitable for high-voltage power supplies in industrial automation • Ideal for inverter stages in motor-control systems • Used for DC-DC conversion in heavy-duty electrical equipment • Can be used for switch-mode functions in power-distribution modules

What operating temperature range can it withstand?

It functions between -55°C and +150°C, enabling use in environments with wide thermal variation.

What package type is provided for PCB integration?

The device is supplied in a surface-mount PowerPAK 10x12 package with eight pins for Compact assembly.

How does the device meet automotive development needs?

It conforms to AEC-Q101 qualification, supporting designs that require automotive-grade component robustness.

What are the physical footprint dimensions?

The component measures 6.15mm in length and 5.15mm in width for space-conscious layouts.