Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- N° de stock RS:
- 252-0268
- Référence fabricant:
- SIHK185N60E-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 2 unités)*
9,50 €
(TVA exclue)
11,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 2 050 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,75 € | 9,50 € |
| 20 - 48 | 4,465 € | 8,93 € |
| 50 - 98 | 4,03 € | 8,06 € |
| 100 - 198 | 3,805 € | 7,61 € |
| 200 + | 3,565 € | 7,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0268
- Référence fabricant:
- SIHK185N60E-T1-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 114W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 114W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Length 6.15mm | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain-Source Voltage, 19A Continuous Drain Current - SIHK185N60E-T1-GE3
Features and Benefits:
• 19A continuous drain current supports substantial load currents
• 0.16Ω Rds(on) reduces conduction losses during operation
• 114W power dissipation permits high-power handling in compact layouts
• 33nC typical gate charge allows predictable switching energy budgeting
• ±20V gate tolerance preserves gate integrity under control transients
Applications
• Ideal for automotive electronic control modules requiring automotive-grade components
• Used for motor-drive front-end switching in industrial equipment
• Can be used for switch-mode power supplies in off-line converters
• Useful in power management circuits demanding surface-mount solutions
What thermal extremes can it withstand during deployment?
How is it packaged for PCB assembly?
Does it meet automotive qualification criteria?
What channel and conduction mode does it use?
Liens connexes
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