Vishay E Type N-Channel Power MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- N° de stock RS:
- 252-0268
- Référence fabricant:
- SIHK185N60E-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 2 unités)*
9,50 €
(TVA exclue)
11,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 2 050 unité(s) expédiée(s) à partir du 25 juin 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,75 € | 9,50 € |
| 20 - 48 | 4,465 € | 8,93 € |
| 50 - 98 | 4,03 € | 8,06 € |
| 100 - 198 | 3,805 € | 7,61 € |
| 200 + | 3,565 € | 7,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0268
- Référence fabricant:
- SIHK185N60E-T1-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Width 5.15mm | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 19A Maximum Continuous Drain Current - SIHK185N60E-T1-GE3
Features and Benefits:
Applications
What operating temperature range can it withstand?
What package type is provided for PCB integration?
How does the device meet automotive development needs?
What are the physical footprint dimensions?
Liens connexes
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