Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
- N° de stock RS:
- 239-8636
- Référence fabricant:
- SIHK055N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,44 €
(TVA exclue)
10,21 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 050 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,44 € |
| 10 - 24 | 7,93 € |
| 25 - 49 | 7,18 € |
| 50 - 99 | 6,74 € |
| 100 + | 6,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8636
- Référence fabricant:
- SIHK055N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.056Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 236W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.056Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 236W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 42A Continuous Drain Current - SIHK055N60E-T1-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion and automotive control environments. It operates across an extended ambient range and is offered in a compact surface-mount package suited to high-density assemblies, providing a balance of power handling and thermal capacity for industrial and vehicle electronic systems.
Features and Benefits:
• 650V rating enables high-voltage switching applications
• 42A continuous current supports heavy-load operation
• 0.056Ω Rds(on) reduces conduction losses
• 236W power dissipation allows sustained power throughput
• 54nC typical gate charge minimises switching energy
• 30V gate tolerance ensures robust drive margin
• 42A continuous current supports heavy-load operation
• 0.056Ω Rds(on) reduces conduction losses
• 236W power dissipation allows sustained power throughput
• 54nC typical gate charge minimises switching energy
• 30V gate tolerance ensures robust drive margin
Applications
• Suitable for traction inverter stage power switches
• Ideal for high-voltage DC-DC converter outputs
• Used with motor-drive controllers in automotive systems
• Can be used for industrial power-supply switching
• Appropriate for surface-mounted high-power assemblies
• Ideal for high-voltage DC-DC converter outputs
• Used with motor-drive controllers in automotive systems
• Can be used for industrial power-supply switching
• Appropriate for surface-mounted high-power assemblies
What thermal range can I expect when deploying this device?
It is specified to function from -55°C up to +150°C, enabling operation in extreme ambient and under-bonnet conditions.
How does the package influence mounting and cooling?
The PowerPAK 10x12 surface-mount format provides a low-profile footprint that facilitates PCB thermal conduction and dense board layouts.
Is this device suitable for automotive projects with qualification needs?
It meets AEC-Q101 requirements, making it applicable to many vehicle electronics designs that require automotive-grade components.
What gate-drive constraints should be observed?
The maximum gate-to-source voltage is 30V, so gate-drive circuitry must limit excursions within that range to prevent stress.
Liens connexes
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4604LDP-T1-GE3