Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
- N° de stock RS:
- 239-8636
- Référence fabricant:
- SIHK055N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,44 €
(TVA exclue)
10,21 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 050 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,44 € |
| 10 - 24 | 7,93 € |
| 25 - 49 | 7,18 € |
| 50 - 99 | 6,74 € |
| 100 + | 6,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8636
- Référence fabricant:
- SIHK055N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.056Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 236W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.056Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 236W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 42A Maximum Continuous Drain Current - SIHK055N60E-T1-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power management in demanding industrial and automotive contexts. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and Compact packaging are required.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 42A continuous drain current supports heavy-load operation • 0.056Ω low Rds(on) reduces conduction losses • 54nC typical gate charge balances switching speed and drive effort • 236W power dissipation allows sustained power handling • Rated to +150°C for elevated-temperature environments
Applications
• Suitable for power conversion stages in industrial automation • Ideal for motor drive inverter switching circuits • Used for high-voltage DC-DC converters in electrical systems • Can be used for automotive power management modules that require AEC-Q101 qualification
What mounting style is required for board assembly?
It is supplied in a PowerPAK 10x12 surface package with eight pins designed for surface-mount soldering processes and thermal conduction to the PCB.
How does the gate drive requirement affect controller selection?
The device supports gate-source voltages up to 30V and has a typical gate charge of 54nC, so drivers must source sufficient charge for desired switching transitions while remaining within the VGS limit.
What environmental extremes can it withstand during operation?
The component is specified for operation from -55°C up to +150°C, enabling use across a broad ambient and junction temperature range in harsh settings.
Are there industry approvals relevant to automotive use?
It meets AEC-Q101 standards for automotive-grade semiconductors and is RoHS compliant for material restrictions.
Liens connexes
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4604LDP-T1-GE3