Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- N° de stock RS:
- 225-9913
- Référence fabricant:
- SIHG15N80AEF-GE3
- Fabricant:
- Vishay
Sous-total (1 tube de 25 unités)*
40,55 €
(TVA exclue)
49,075 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 525 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 + | 1,622 € | 40,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-9913
- Référence fabricant:
- SIHG15N80AEF-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.39mm | |
| Standards/Approvals | RoHS | |
| Height | 10.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 2.39mm | ||
Standards/Approvals RoHS | ||
Height 10.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHG15N80AEF-GE3
Features and Benefits:
• 13A continuous drain current supports moderate power throughput
• 350mΩ low Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained thermal loading
• 53nC typical gate charge facilitates predictable switching performance
• ±30V gate tolerance permits wide control-voltage flexibility
Applications
• Suitable for industrial motor drive switching
• Ideal for switch-mode power supplies in energy systems
• Can be used for clamped inductive load switching
• Used with gate drivers for fast-switching topologies
What temperature extremes can it withstand in operation?
How does the package affect thermal and mounting choices?
What gate-drive constraints should be observed?
What forward conduction behaviour can be expected during switching transitions?
Liens connexes
- Vishay EF Type N-Channel MOSFET 800 V, 3-Pin TO-247 SIHG15N80AEF-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG15N80AE-GE3
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247 SIHG026N60EF-GE3
