Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- N° de stock RS:
- 225-9914
- Référence fabricant:
- SIHG15N80AEF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
18,12 €
(TVA exclue)
21,925 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 530 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,624 € | 18,12 € |
| 50 - 120 | 3,262 € | 16,31 € |
| 125 - 245 | 3,076 € | 15,38 € |
| 250 - 495 | 2,90 € | 14,50 € |
| 500 + | 2,68 € | 13,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-9914
- Référence fabricant:
- SIHG15N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 10.41mm | |
| Width | 2.39mm | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 10.41mm | ||
Width 2.39mm | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Drain Current - SIHG15N80AEF-GE3
This power MOSFET is a silicon N‑channel transistor designed for high‑voltage switching and power conversion in industrial environments. It is intended for surface‑mounted assemblies requiring robust drain‑to‑source voltage handling and elevated operating temperatures, making it suitable for demanding electrical and mechanical control systems.
Features and Benefits:
• 800V rating enables high‑voltage switching applications • 13A continuous current supports substantial load drive • 350mΩ Rds(on) reduces conduction losses in power paths • 53nC typical gate charge allows predictable switching control • 156W power dissipation permits sustained thermal loading • 30V maximum gate stress protects gate‑drive circuitry
Applications
• Suitable for high‑voltage inverters in automation systems • Ideal for power supplies in industrial control equipment • Used for motor‑drive switching in electrical assemblies • Can be used for snubber and clamp networks in power electronics
What temperature range can it operate within?
It functions across a broad span from -55°C up to 150°C, enabling use in varied thermal environments.
How is it packaged for mounting on assemblies?
It comes in a TO‑247AC enclosure configured for surface‑mount installation with three connection pins.
What gate drive considerations are relevant for switching?
The gate must be driven within ±30V limits and sized to handle a typical 53nC charge for controlled switching transitions.
How does the device manage power under load?
It can dissipate up to 156W when properly cooled, allowing continuous operation at rated current with adequate thermal management.
Liens connexes
- Vishay EF Type N-Channel MOSFET 800 V, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG15N80AE-GE3
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247 SIHG026N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG70N60EF-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3