Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3
- N° de stock RS:
- 188-4876
- Référence fabricant:
- SIHG21N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
71,10 €
(TVA exclue)
86,025 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 25 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 2,844 € | 71,10 € |
| 50 - 100 | 2,674 € | 66,85 € |
| 125 + | 2,417 € | 60,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-4876
- Référence fabricant:
- SIHG21N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 235mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 235mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5.31mm | ||
Length 15.87mm | ||
Height 20.82mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Continuous Drain Current - SIHG21N80AE-GE3
This power MOSFET is a high-voltage, N-channel switching device designed for industrial and power-conversion environments. It operates as an enhancement-mode transistor capable of handling substantial voltages and currents while being mounted through-hole in a TO-247AC package. The device is suitable for systems that demand rugged semiconductor switching across a wide ambient temperature range.
Features and Benefits:
• 800V drain rating enables high-voltage switching capability
• 17.4A continuous drain supports significant load current
• 235mΩ Rds(on) provides reduced conduction losses
• 179W power dissipation allows high-power operation
• 48nC typical gate charge yields predictable switching energy
• 30V gate rating permits common gate-drive voltages
• 17.4A continuous drain supports significant load current
• 235mΩ Rds(on) provides reduced conduction losses
• 179W power dissipation allows high-power operation
• 48nC typical gate charge yields predictable switching energy
• 30V gate rating permits common gate-drive voltages
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for inverter and motor-drive switching stages
• Used with hard-switching topologies in power converters
• Can be used for class-D audio amplifiers requiring high voltage
• Suitable for energy and renewable power electronics
• Ideal for inverter and motor-drive switching stages
• Used with hard-switching topologies in power converters
• Can be used for class-D audio amplifiers requiring high voltage
• Suitable for energy and renewable power electronics
What gate-drive voltage range can I use safely?
The device accepts a maximum gate-to-source voltage of 30V, so gate-drive circuits should be designed to remain within this limit to avoid gate stress.
How does it perform across temperature extremes?
The transistor is rated to operate from -55°C up to 150°C, permitting use in elevated-temperature industrial installations with appropriate thermal management.
What mounting considerations apply for PCB design?
It is supplied in a through-hole TO-247AC package, so board layouts should include suitable hole spacing and heat-sinking provisions for the package footprint.
What switching behaviour should I expect from the gate characteristics?
With a typical total gate charge of 48nC, designers can estimate switching energy and select gate drivers that balance switching speed and EMI for their topology.
Liens connexes
- Vishay SiHG21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHW21N80AE-GE3
- Vishay SIHB21N80AE N channel-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- Vishay SIHB21N80AE N channel-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247