Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC
- N° de stock RS:
- 268-8296
- Référence fabricant:
- SIHG085N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 tube de 25 unités)*
119,475 €
(TVA exclue)
144,575 €
(TVA incluse)
Ajouter 25 unités pour bénéficier d'une livraison gratuite
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 75 | 4,779 € | 119,48 € |
| 100 - 475 | 3,914 € | 97,85 € |
| 500 - 975 | 3,336 € | 83,40 € |
| 1000 + | 2,992 € | 74,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8296
- Référence fabricant:
- SIHG085N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay EF series power MOSFET with fast body diode which has reduced switching and conduction losses, and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Liens connexes
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