Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- N° de stock RS:
- 268-8296
- Référence fabricant:
- SIHG085N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
82,85 €
(TVA exclue)
100,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 475 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 75 | 3,314 € | 82,85 € |
| 100 - 475 | 2,766 € | 69,15 € |
| 500 - 975 | 2,732 € | 68,30 € |
| 1000 + | 2,699 € | 67,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 268-8296
- Référence fabricant:
- SIHG085N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHG085N60EF-GE3
This power MOSFET is a high-voltage N‑channel switching device designed for through‑hole mounting in power assemblies. It is intended for use where robust high-voltage switching and efficient conduction are required across extended temperature ranges, and it conforms to RoHS environmental restrictions.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 34A continuous drain current supports substantial load handling
• 0.084Ω Rds(on) reduces conduction losses under load
• 184W power dissipation allows significant thermal throughput
• 63nC typical gate charge offers predictable drive requirements
• -55°C to 150°C operating range permits harsh environment use
• 34A continuous drain current supports substantial load handling
• 0.084Ω Rds(on) reduces conduction losses under load
• 184W power dissipation allows significant thermal throughput
• 63nC typical gate charge offers predictable drive requirements
• -55°C to 150°C operating range permits harsh environment use
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inversion stages
• Used with discrete power converters in robotics
• Can be used for inverter front-end switching stages
• Suitable for power factor correction circuits
• Ideal for industrial motor drive inversion stages
• Used with discrete power converters in robotics
• Can be used for inverter front-end switching stages
• Suitable for power factor correction circuits
What package and mounting style does it use?
It is supplied in a TO-247AC package and designed for through‑hole mounting to enable secure board fixation and straightforward heatsinking.
What gate drive voltage limits should I observe?
The maximum gate‑to‑source rating is 30V, so gate drive circuitry must remain within this boundary to prevent gate damage.
How does thermal performance relate to installation?
The device’s 184W dissipation rating requires adequate heatsinking and thermal management to maintain junction temperatures below specified limits during high‑power operation.
Is it suitable for automotive systems?
It is not specified to automotive standards
suitability depends on system safety and qualification requirements beyond the provided ratings.
Liens connexes
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG100N65E-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG041N65SF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG050N65SF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG110N65SF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG080N65SF-GE3