Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

N° de stock RS:: 210-4986
Référence fabricant:: SIHG17N80AE-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

Sous-total (1 paquet de 5 unités)*

13,25 €

(TVA exclue)

16,05 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	le paquet*
5 +	2,65 €	13,25 €

*Prix donné à titre indicatif

N° de stock RS:: 210-4986
Référence fabricant:: SIHG17N80AE-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-247AC
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	179W
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	41nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	15.66mm
	Length	35.3mm
	Standards/Approvals	RoHS
	Height	4.83mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-247AC
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 179W
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 41nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 15.66mm
	Length 35.3mm
	Standards/Approvals RoHS
	Height 4.83mm
	Automotive Standard No

Datasheet - SIHG17N80AE-GE3

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It operates as an enhancement-mode N-channel device and is intended for through-hole mounting in applications requiring robust high-voltage handling and significant continuous current capability. The component meets RoHS requirements and functions across a wide ambient temperature range.

Features and Benefits:

• 800V drain-source rating enables high-voltage system operation
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment

What temperature range can it tolerate during operation?

It is specified to function from -55°C up to 150°C, enabling use in both cold-start and elevated-heat environments.

Which package type and mounting style does it use?

The device is supplied in a TO-247AC package and is designed for through-hole PCB mounting for secure mechanical and thermal connection.

How does the forward voltage affect conduction?

The forward voltage of 1.2V indicates the on-state voltage drop under conduction conditions, which factors into thermal design and power-loss calculations.

Is it suitable for automotive qualification testing?

It is not designated as automotive standard

suitability for vehicle use should be evaluated against the required automotive specifications.