Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3
- N° de stock RS:
- 653-136
- Référence fabricant:
- SIHG11N80AEF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
33,675 €
(TVA exclue)
40,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 100 | 1,347 € | 33,68 € |
| 125 + | 1,32 € | 33,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-136
- Référence fabricant:
- SIHG11N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.483Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 78W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.25mm | |
| Width | 20.70mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.483Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 78W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 16.25mm | ||
Width 20.70mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHG11N80AEF-GE3
This power MOSFET is a high-voltage, N-channel switching device designed for power-electronic duties where robust voltage handling and through-hole mounting are required. It operates as an enhancement-mode transistor suitable for applications needing a high drain-to-source breakdown and conventional gate-drive arrangements. The package supports wire-lead assembly and is intended for industrial and electronic system integration.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports moderate load throughput • 0.483Ω Rds(on) minimises conduction losses under load • 41nC gate charge reduces switching energy and drive requirements • 78W power dissipation allows sustained thermal loading • 30V maximum gate drive preserves gate insulation integrity
Applications
• Suitable for high-voltage power supplies and converters • Ideal for motor-drive inverter stages in industrial controls • Used for switch-mode power electronics and converters • Can be used for medium-power PFC and boost regulator designs
What temperature range can it reliably operate within?
It is specified to function between -55°C and 150°C, accommodating cold-start and elevated-temperature environments.
How is the device mounted in typical assemblies?
It is supplied in a through-hole TO-247AC package with three pins for secure board attachment and heat-sink mounting.
What gate-drive constraints should designers observe?
The gate-to-source voltage must not exceed 30V to avoid damaging the gate dielectric.
Are there any handling considerations for thermal management?
The 78W dissipation figure requires appropriate heat-sinking and thermal-interface practices to maintain junction temperatures within specified limits.
Liens connexes
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