Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2

N° de stock RS:: 222-4665
Référence fabricant:: IPD50N06S4L08ATMA2
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2

Sous-total (1 bobine de 2500 unités)*

1 212,50 €

(TVA exclue)

1 467,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

10 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	la bobine*
2500 +	0,485 €	1 212,50 €

*Prix donné à titre indicatif

N° de stock RS:: 222-4665
Référence fabricant:: IPD50N06S4L08ATMA2
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16V
	Maximum Power Dissipation Pd	71W
	Typical Gate Charge Qg @ Vgs	49nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.3mm
	Length	6.5mm
	Width	6.22mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16V
	Maximum Power Dissipation Pd 71W
	Typical Gate Charge Qg @ Vgs 49nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.3mm
	Length 6.5mm
	Width 6.22mm
	Automotive Standard AEC-Q101

Datasheet - IPD50N06S4L08ATMA2

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L08ATMA2

This MOSFET is a surface-mount N-channel enhancement device designed for high-current switching in demanding operating conditions. It is intended for applications that require robust conduction, moderate voltage handling and operation across a wide temperature range typical of automotive and industrial environments.

Features and Benefits:

• Low conduction resistance of 7.8mΩ for reduced conduction losses
• High continuous current capability of 50A for heavy-load switching
• 60V drain-source rating for mid-voltage system compatibility
• 71W maximum power dissipation for elevated thermal handling
• Typical gate charge 49nC enabling predictable switching behaviour
• Gate-source voltage tolerance up to 16V for flexible drive levels

Applications

• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in transportation systems
• Used for motor drive stages requiring high current
• Can be used for battery management and power steering
• Used in high-power switching on surface-mounted assemblies

What temperature range can it operate within?

It supports continuous operation from -55°C up to 175°C.

What package and mounting style does it use?

The component is supplied in a TO-252 package for surface mounting.

How many electrical connections does it provide?

It offers three pins for gate, drain and source connections.

What is the forward voltage characteristic under conduction?

The device has a forward voltage of 1.3V during conduction.

What automotive qualification level does it meet?

It conforms to the AEC-Q101 automotive grade specification.