Infineon OptiMOS N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1

N° de stock RS:: 222-4667
Référence fabricant:: IPD60N10S4L12ATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1

Sous-total (1 bobine de 2500 unités)*

1 067,50 €

(TVA exclue)

1 292,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 janvier 2027

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Unité	Prix par unité	la bobine*
2500 +	0,427 €	1 067,50 €

*Prix donné à titre indicatif

N° de stock RS:: 222-4667
Référence fabricant:: IPD60N10S4L12ATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16V
	Maximum Power Dissipation Pd	94W
	Typical Gate Charge Qg @ Vgs	38nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	6.22mm
	Length	6.5mm
	Standards/Approvals	No
	Height	2.3mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16V
	Maximum Power Dissipation Pd 94W
	Typical Gate Charge Qg @ Vgs 38nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 6.22mm
	Length 6.5mm
	Standards/Approvals No
	Height 2.3mm
	Automotive Standard AEC-Q101

Datasheet - IPD60N10S4L12ATMA1

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 60A Maximum Continuous Drain Current - IPD60N10S4L12ATMA1

This MOSFET is a high-voltage N-channel switch designed for demanding electronic power stages and automotive environments. It operates over a wide temperature range and is intended for surface-mount assemblies requiring robust switching performance and thermal handling.

Features and Benefits:

• 100 V drain rating enabling high-voltage switching capability
• 60 A continuous drain current supporting heavy current loads
• 12 mΩ Rds(on) reducing conduction losses in power paths
• 94 W power dissipation improving thermal endurance under load
• 38 nC typical gate charge allowing predictable switching energy
• 16 V maximum gate drive permitting flexible gate-voltage choices

Applications

• Suitable for automotive power converters requiring AEC‑Q101 compliance
• Ideal for DC-DC converters in transport and industrial systems
• Used for motor-drive half-bridge stages in EV subsystems
• Can be used for synchronous rectification in power supplies
• Used with Compact surface-mount assemblies on thermal PCBs

What temperature extremes can it withstand in operation?

It is specified to operate from −55 °C up to 175 °C, allowing use in high-temperature environments.

What packaging and mounting considerations apply for thermal management?

It is supplied in a TO‑252 surface-mount package that facilitates board-mounted heat dissipation and standard solder reflow attachment.

What gate-voltage limits should be observed to avoid device stress?

The maximum gate-to-source voltage is 16 V and gate-drive circuitry should not exceed this to prevent gate damage.

What channel conduction mode and type does it employ?

It uses an enhancement-mode N-channel configuration suitable for low-side and high-side switching when gate drive is appropriate.