Infineon OptiMOS-T2 N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2

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780,00 €

(TVA exclue)

945,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2500 - 25000,312 €780,00 €
5000 +0,296 €740,00 €

*Prix donné à titre indicatif

N° de stock RS:
218-3044
Référence fabricant:
IPD50N06S4L12ATMA2
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22mm

Automotive Standard

AEC-Q101

Infineon OptiMOS-T2 Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L12ATMA2


This MOSFET is a 60V N-channel enhancement device designed for high-current switching in demanding environments. It operates across a wide ambient temperature span and is intended for surface-mounted assemblies where efficient conduction and Compact packaging are required.

Features and Benefits:


• Low on-resistance of 12mΩ reduces conduction losses
• Maximum continuous drain current of 50A supports heavy loads
• 50W power dissipation capability manages thermal stress
• Gate charge of 30nC enables quicker switching transitions
• 16V gate rating allows robust gate-drive margins
• AEC-Q101 qualification ensures suitability for automotive use

Applications


• Suitable for DC-DC converters in automotive electronics
• Ideal for power switching in traction auxiliary systems
• Used for high-current motor driver stages
• Can be used for battery management and protection circuits
• Appropriate for surface-mount power modules on Compact boards

What are the device’s voltage limits for drain and gate?


The drain-to-source withstands up to 60V while the gate-to-source is rated to 16V.

How does the device handle extreme ambient temperatures?


It is specified to operate down to -55°C and up to 175°C for varied thermal environments.

What package and mounting form does it use for PCB assembly?


It is supplied in a TO-252 package designed for surface mounting.

What channel type and mode determine its conduction behaviour?


It uses an N-channel structure configured in enhancement mode for controlled switching.

What physical footprint considerations affect layout thermal design?


The package dimensions are Compact with a height of 2.41mm, length of 6.73mm and width of 6.22mm to aid dense board placement.

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