Infineon OptiMOS-T2 N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2
- N° de stock RS:
- 218-3044
- Référence fabricant:
- IPD50N06S4L12ATMA2
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
780,00 €
(TVA exclue)
945,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 5 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 0,312 € | 780,00 € |
| 5000 + | 0,296 € | 740,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-3044
- Référence fabricant:
- IPD50N06S4L12ATMA2
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS-T2 Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L12ATMA2
Features and Benefits:
• Maximum continuous drain current of 50A supports heavy loads
• 50W power dissipation capability manages thermal stress
• Gate charge of 30nC enables quicker switching transitions
• 16V gate rating allows robust gate-drive margins
• AEC-Q101 qualification ensures suitability for automotive use
Applications
• Ideal for power switching in traction auxiliary systems
• Used for high-current motor driver stages
• Can be used for battery management and protection circuits
• Appropriate for surface-mount power modules on Compact boards
What are the devices voltage limits for drain and gate?
How does the device handle extreme ambient temperatures?
What package and mounting form does it use for PCB assembly?
What channel type and mode determine its conduction behaviour?
What physical footprint considerations affect layout thermal design?
Liens connexes
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