Infineon OptiMOS-T2 N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2

N° de stock RS:: 218-3045
Référence fabricant:: IPD50N06S4L12ATMA2
Fabricant:: Infineon

Infineon OptiMOS-T2 N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2

Sous-total (1 paquet de 20 unités)*

13,24 €

(TVA exclue)

16,02 €

(TVA incluse)

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Unité	Prix par unité	le paquet*
20 +	0,662 €	13,24 €

*Prix donné à titre indicatif

N° de stock RS:: 218-3045
Référence fabricant:: IPD50N06S4L12ATMA2
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	OptiMOS-T2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16V
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Maximum Operating Temperature	175°C
	Width	6.22mm
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series OptiMOS-T2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16V
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Maximum Operating Temperature 175°C
	Width 6.22mm
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPD50N06S4L12ATMA2

Infineon OptiMOS-T2 Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L12ATMA2

This MOSFET is a 60V N-channel enhancement device designed for high-current switching in demanding environments. It operates across a wide ambient temperature span and is intended for surface-mounted assemblies where efficient conduction and Compact packaging are required.

Features and Benefits:

• Low on-resistance of 12mΩ reduces conduction losses
• Maximum continuous drain current of 50A supports heavy loads
• 50W power dissipation capability manages thermal stress
• Gate charge of 30nC enables quicker switching transitions
• 16V gate rating allows robust gate-drive margins
• AEC-Q101 qualification ensures suitability for automotive use

Applications

• Suitable for DC-DC converters in automotive electronics
• Ideal for power switching in traction auxiliary systems
• Used for high-current motor driver stages
• Can be used for battery management and protection circuits
• Appropriate for surface-mount power modules on Compact boards

What are the device’s voltage limits for drain and gate?

The drain-to-source withstands up to 60V while the gate-to-source is rated to 16V.

How does the device handle extreme ambient temperatures?

It is specified to operate down to -55°C and up to 175°C for varied thermal environments.

What package and mounting form does it use for PCB assembly?

It is supplied in a TO-252 package designed for surface mounting.

What channel type and mode determine its conduction behaviour?

It uses an N-channel structure configured in enhancement mode for controlled switching.

What physical footprint considerations affect layout thermal design?

The package dimensions are Compact with a height of 2.41mm, length of 6.73mm and width of 6.22mm to aid dense board placement.