Infineon IPD Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- N° de stock RS:
- 217-2519
- Référence fabricant:
- IPD50P04P413ATMA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
20,02 €
(TVA exclue)
24,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 6 820 unité(s) expédiée(s) à partir du 22 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 20 | 1,001 € | 20,02 € |
| 40 - 80 | 0,951 € | 19,02 € |
| 100 - 180 | 0,91 € | 18,20 € |
| 200 - 480 | 0,871 € | 17,42 € |
| 500 + | 0,811 € | 16,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2519
- Référence fabricant:
- IPD50P04P413ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 58W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 58W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50P04P413ATMA2
This MOSFET is a P-channel enhancement device designed to control high currents in demanding environments, providing a semiconductor switch capable of handling substantial drain-source loads while tolerating wide temperature ranges.
Features and Benefits:
• 40V drain-source rating enables medium-voltage switching applications
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies
What temperature range can it reliably operate within?
It is specified to operate from -55°C up to 175°C.
What package type and mounting method are used?
It is supplied in a TO-252 package intended for through-hole mounting.
How does the gate-charge figure affect switching design?
A 39nC gate charge indicates the gate-drive energy and influences driver sizing and switching losses.
Is it suitable for use in automotive electronic systems?
It conforms to the AEC‑Q101 automotive device standard for suitability in vehicle environments.
What is the maximum allowable gate-to-source voltage?
The maximum VGS rating is 20V.
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