Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 214-9046
- Référence fabricant:
- IPD70R1K4P7SAUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
382,50 €
(TVA exclue)
462,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 10 000 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,153 € | 382,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9046
- Référence fabricant:
- IPD70R1K4P7SAUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 22.7W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 22.7W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
It has Excellent thermal behaviour
Integrated ESD protection diode
Liens connexes
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