Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1

N° de stock RS:: 214-9046
Référence fabricant:: IPD70R1K4P7SAUMA1
Fabricant:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1

Sous-total (1 bobine de 2500 unités)*

382,50 €

(TVA exclue)

462,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Plus 10 000 unité(s) expédiée(s) à partir du 12 octobre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,153 €	382,50 €

*Prix donné à titre indicatif

N° de stock RS:: 214-9046
Référence fabricant:: IPD70R1K4P7SAUMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	4.7nC
	Forward Voltage Vf	900mV
	Maximum Power Dissipation Pd	22.7W
	Maximum Gate Source Voltage Vgs	16V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	6.22mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 4.7nC
	Forward Voltage Vf 900mV
	Maximum Power Dissipation Pd 22.7W
	Maximum Gate Source Voltage Vgs 16V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 6.22mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD70R1K4P7SAUMA1

Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 4A Maximum Continuous Drain Current - IPD70R1K4P7SAUMA1

This MOSFET is a high-voltage switching device designed for power conversion and drive applications. It operates across a wide temperature range and provides N-channel enhancement-mode switching capability suitable for surface-mounted assemblies in demanding electrical systems.

Features and Benefits:

• 700 V drain rating enables high-voltage switching applications
• 4 A continuous drain current supports moderate load currents
• 1.4 Ω low RDS(on) reduces conduction losses under load
• 22.7 W power dissipation allows sustained thermal handling
• 4.7 nC typical gate charge enables efficient switching control
• 16 V gate rating permits substantial gate-drive headroom

Applications

• Suitable for SMPS primary switch stages
• Ideal for motor-drive half-bridge switches
• Used with high-voltage industrial power supplies
• Can be used for switch-mode power regulation
• Appropriate for surface-mount power assemblies

What thermal range is acceptable for operation?

It is specified to function from −40 °C up to 150 °C.

What package style and mounting method does it use?

It is supplied in a TO-252 package and intended for surface mounting.

How many pins are available for PCB connection?

There are three electrical pins for standard MOSFET connection.

What is the typical forward voltage when conducting?

The forward voltage under specified conditions is 0.9 V.

What channel characteristics affect device behaviour?

It is an N-channel, enhancement-mode device with specified gate and drain limits.