Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1
- N° de stock RS:
- 214-9047
- Référence fabricant:
- IPD70R1K4P7SAUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 50 unités)*
19,55 €
(TVA exclue)
23,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 12 150 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 50 | 0,391 € | 19,55 € |
| 100 - 200 | 0,301 € | 15,05 € |
| 250 - 450 | 0,282 € | 14,10 € |
| 500 - 1200 | 0,262 € | 13,10 € |
| 1250 + | 0,243 € | 12,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9047
- Référence fabricant:
- IPD70R1K4P7SAUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Power Dissipation Pd | 22.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Power Dissipation Pd 22.7W | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
It has Excellent thermal behaviour
Integrated ESD protection diode
Liens connexes
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