Infineon CoolMOS P7 Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin IPAK
- N° de stock RS:
- 215-2553
- Référence fabricant:
- IPSA70R750P7SAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 75 unités)*
23,925 €
(TVA exclue)
28,95 €
(TVA incluse)
Ajouter 375 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 27 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,319 € | 23,93 € |
| 150 - 300 | 0,246 € | 18,45 € |
| 375 - 675 | 0,233 € | 17,48 € |
| 750 - 1800 | 0,227 € | 17,03 € |
| 1875 + | 0,222 € | 16,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2553
- Référence fabricant:
- IPSA70R750P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | IPAK | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 34.7W | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type IPAK | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 34.7W | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 700V Cool MOS™ P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. The latest CoolMOS™P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses (Eoss)
Liens connexes
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