STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7
- N° de stock RS:
- 201-0869
- Référence fabricant:
- SCTH90N65G2V-7
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
26,48 €
(TVA exclue)
32,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 02 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 26,48 € |
| 5 - 9 | 24,88 € |
| 10 - 24 | 23,57 € |
| 25 - 49 | 22,25 € |
| 50 + | 21,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 201-0869
- Référence fabricant:
- SCTH90N65G2V-7
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Series | SCTH90 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 484W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 10.4mm | |
| Width | 4.8 mm | |
| Length | 15.25mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Series SCTH90 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 484W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 10.4mm | ||
Width 4.8 mm | ||
Length 15.25mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Liens connexes
- STMicroelectronics SCTH90 Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7