STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK

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N° de stock RS:
224-9997
Référence fabricant:
SCTH35N65G2V-7AG
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3.3V

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14nC

Maximum Operating Temperature

175°C

Height

15.25mm

Length

10.4mm

Standards/Approvals

No

Width

4.8 mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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