STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7
- N° de stock RS:
- 215-226
- Référence fabricant:
- SCT018H65G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
16,97 €
(TVA exclue)
20,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,97 € |
| 10 - 99 | 15,28 € |
| 100 + | 14,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-226
- Référence fabricant:
- SCT018H65G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 385W | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 75°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 385W | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 75°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Liens connexes
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