STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- N° de stock RS:
- 224-9999
- Référence fabricant:
- SCTH35N65G2V-7AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
14,52 €
(TVA exclue)
17,57 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- Plus 38 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 14,52 € |
| 5 - 9 | 13,79 € |
| 10 - 24 | 12,89 € |
| 25 - 49 | 12,58 € |
| 50 + | 12,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 224-9999
- Référence fabricant:
- SCTH35N65G2V-7AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 3.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Height | 15.25mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 3.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Height 15.25mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Liens connexes
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