STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- N° de stock RS:
- 224-9999
- Référence fabricant:
- SCTH35N65G2V-7AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
14,52 €
(TVA exclue)
17,57 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 38 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 14,52 € |
| 5 - 9 | 13,79 € |
| 10 - 24 | 12,89 € |
| 25 - 49 | 12,58 € |
| 50 + | 12,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 224-9999
- Référence fabricant:
- SCTH35N65G2V-7AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.25mm | |
| Width | 4.8 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 175°C | ||
Height 15.25mm | ||
Width 4.8 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Liens connexes
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG
- STMicroelectronics N-Channel STH65N Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 7-Pin H2PAK SCTH100N65G2-7AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 7-Pin H2PAK
- STMicroelectronics GH50H65DRB2-7AG IGBT 7-Pin H2PAK-7, Surface Mount
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7