STMicroelectronics STPOWER Gen3 SiC MOSFET Type N-Channel, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- N° de stock RS:
- 671-932
- Référence fabricant:
- SCT018H65G3-7
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 671-932
- Référence fabricant:
- SCT018H65G3-7
- Fabricant:
- STMicroelectronics
Spécifications
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK-7 | |
| Series | STPOWER Gen3 SiC MOSFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 385W | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Height | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK-7 | ||
Series STPOWER Gen3 SiC MOSFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 385W | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Height 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN