STMicroelectronics Sct N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- N° de stock RS:
- 719-465
- Référence fabricant:
- SCT018H65G3-7
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
16,75 €
(TVA exclue)
20,27 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 271 unité(s) expédiée(s) à partir du 13 juillet 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,75 € |
| 10 - 49 | 15,34 € |
| 50 - 99 | 14,32 € |
| 100 + | 13,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-465
- Référence fabricant:
- SCT018H65G3-7
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK-7 | |
| Series | Sct | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 385W | |
| Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK-7 | ||
Series Sct | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 385W | ||
Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Length 15.25mm | ||
- Pays d'origine :
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very fast and robust intrinsic body diode
Very low RDS(on) over the entire temperature range
High speed switching performances
Source sensing pin for increased efficiency
Liens connexes
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