Vishay Single 1 N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF
- N° de stock RS:
- 180-8664
- Référence fabricant:
- IRFBE30LPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
15,96 €
(TVA exclue)
19,31 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 20 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,192 € | 15,96 € |
| 50 - 120 | 2,714 € | 13,57 € |
| 125 - 245 | 2,556 € | 12,78 € |
| 250 - 495 | 2,396 € | 11,98 € |
| 500 + | 2,234 € | 11,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8664
- Référence fabricant:
- IRFBE30LPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-262 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-262 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF
This power MOSFET is an N-channel transistor designed for high-voltage switching and power conversion tasks in industrial electronics. Housed in a TO-262 package, it serves as a single-element power transistor capable of handling elevated drain-source voltages and sustained power dissipation across a wide thermal range, making it suitable for demanding operating conditions where robust voltage endurance is required.
Features and Benefits:
• 800V drain capability enabling high-voltage switching
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters
What temperature extremes can it withstand during operation?
It operates across a wide thermal span from -55°C up to 150°C, suitable for environments with significant temperature variation.
How is gate protection maintained during use?
The maximum permissible gate-to-source voltage is 20V, defining the threshold for safe gate-drive amplitudes to avoid damage.
What package should be considered for thermal and mounting needs?
The TO-262 package provides a robust mounting format with three pins and supports heat dissipation compatible with the device’s 125W rating.
How many active elements are contained on the chip?
The device comprises a single active element per chip, simplifying circuit topology for single-transistor configurations.
Liens connexes
- Vishay Single 1 Type N-Channel Power MOSFET 800 V, 3-Pin TO-262 IRFBE30LPBF
- Vishay Single 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-262 IRF830ALPBF
- Vishay IRFBE30 Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay SQ2389CES Type P-Channel Single MOSFETs -40 V Enhancement, 3-Pin SOT-23
- Vishay SQ2389CES Type P-Channel Single MOSFETs -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3
- Vishay SiHF640L Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-262 SIHF640L-GE3
- Vishay IRFI Type P-Channel Power MOSFET 250 V Enhancement, 3-Pin TO-220FP IRFI9634GPBF