Références fabricant

Vishay Single 1 N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF

N° de stock RS:: 180-8316
Référence fabricant:: IRFBE30LPBF
Fabricant:: Vishay

Vishay Single 1 N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF

Actuellement indisponible

Désolés, nous ne savons pas quand ce produit sera réapprovisionné.

N° de stock RS:: 180-8316
Référence fabricant:: IRFBE30LPBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-262
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	78nC
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Number of Elements per Chip	1
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-262
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 78nC
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF

This power MOSFET is an N-channel transistor designed for high-voltage switching and power conversion tasks in industrial electronics. Housed in a TO-262 package, it serves as a single-element power transistor capable of handling elevated drain-source voltages and sustained power dissipation across a wide thermal range, making it suitable for demanding operating conditions where robust voltage endurance is required.

Features and Benefits:

• 800V drain capability enabling high-voltage switching
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters

What temperature extremes can it withstand during operation?

It operates across a wide thermal span from -55°C up to 150°C, suitable for environments with significant temperature variation.

How is gate protection maintained during use?

The maximum permissible gate-to-source voltage is 20V, defining the threshold for safe gate-drive amplitudes to avoid damage.

What package should be considered for thermal and mounting needs?

The TO-262 package provides a robust mounting format with three pins and supports heat dissipation compatible with the device’s 125W rating.

How many active elements are contained on the chip?

The device comprises a single active element per chip, simplifying circuit topology for single-transistor configurations.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.