Vishay IRFBE30 Type N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB
- N° de stock RS:
- 178-0818
- Référence fabricant:
- IRFBE30PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
84,00 €
(TVA exclue)
101,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 350 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,68 € | 84,00 € |
| 100 - 200 | 1,462 € | 73,10 € |
| 250 + | 1,243 € | 62,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0818
- Référence fabricant:
- IRFBE30PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | IRFBE30 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series IRFBE30 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRFBE30 Series Power MOSFET, 800V Drain Source Voltage, 4.1A Continuous Drain Current - IRFBE30PBF
This power MOSFET is a through‑hole N‑channel transistor designed for switching and power control in industrial electronics. It operates as an enhancement‑mode device suitable for high‑voltage applications, offering a combination of voltage handling and gate‑drive capability for demanding electrical systems.
Features and Benefits:
• 800V drain‑source voltage enables high‑voltage switching applications • 4.1A continuous drain current supports moderate load currents • 3 Ω maximum Rds reduces current loss during conduction • 78 nC typical gate charge allows predictable switching behaviour • 125W power dissipation manages thermal stress in power circuits • -55 °C to 150 °C operating range endures wide temperature extremes
Applications
• Suitable for high‑voltage power supplies and converters • Ideal for industrial motor drive switching stages • Used for solid‑state relay and protection circuitry • Can be used for load switching in automation panels
What gate voltage limits should I observe during design?
Gate drive must remain within ±20V maximum relative to source to prevent gate‑oxide stress.
How should thermal management be approached on a PCB?
Use a heatsink on the TO‑220AB package or a thermally conductive mounting solution to dissipate up to 125W of power under rated conditions.
What switching characteristics affect EMI in my design?
The typical gate charge of 78 nC at the specified gate drive influences rise and fall times, impacting switching transitions and electromagnetic emissions.
Is this device suitable for surface‑mounting techniques?
It is supplied in a TO‑220AB through‑hole package intended for mechanical mounting and conventional through‑hole assembly.
Liens connexes
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IRFBE30PBF
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Vishay IRFBE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IRFBE20PBF
- Vishay IRFB Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRFB Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRFB11N50APBF
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB