Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

N° de stock RS:: 653-158
Référence fabricant:: SQ2389CES-T1_GE3
Fabricant:: Vishay

Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3

Sous-total (1 bobine de 3000 unités)*

624,00 €

(TVA exclue)

756,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	0,208 €	624,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-158
Référence fabricant:: SQ2389CES-T1_GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-4.1A
	Maximum Drain Source Voltage Vds	-40V
	Package Type	SOT-23
	Series	SQ2389CES
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.094Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Width	2.64mm
	Standards/Approvals	RoHS
	Length	3.04mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id -4.1A
	Maximum Drain Source Voltage Vds -40V
	Package Type SOT-23
	Series SQ2389CES
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.094Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Width 2.64mm
	Standards/Approvals RoHS
	Length 3.04mm
	Automotive Standard AEC-Q101

Datasheet - SQ2389CES-T1_GE3

Vishay SQ2389CES Series Single MOSFETs, -40V Maximum Drain Source Voltage, -4.1A Maximum Continuous Drain Current - SQ2389CES-T1_GE3

This single MOSFETs device is a P‑channel enhancement‑mode transistor designed for use on printed circuit boards in automotive and industrial control environments. It provides high‑temperature operation and low forward voltage for switching and protection roles within systems that require Compact SOT‑23 packaging and automotive‑grade robustness.

Features and Benefits:

• -40V rating enables handling of moderate negative rail voltages for switching
• 0.094 Ω RDS(on) minimises conduction losses during load operation
• -4.1 A continuous drain current supports moderate power loads on PCBs
• 12 nC typical gate charge reduces drive energy for Faster switching
• 3W power dissipation allows sustained operation at elevated power levels
• -55 °C to 175 °C range suits extended thermal environments

Applications

• Suitable for high‑side switching in automotive electronic modules
• Ideal for load protection in battery management systems
• Used for reverse‑polarity protection in vehicle electronics
• Can be used for power switching in industrial automation controllers

What package should I plan for on the PCB footprint?

The device comes in a three‑lead SOT‑23 package, requiring a small surface‑mount footprint compatible with standard SOT‑23 land patterns.

How does gate drive voltage influence use in systems?

The gate may be driven up to 20 V

ensure gate‑source excursions remain within that limit to avoid device stress.

What thermal considerations apply for sustained operation?

With a maximum junction temperature of 175 °C and 3W dissipation, thermal management such as copper pours or heatsinking is recommended for continuous high‑power use.

Can it meet automotive environmental demands?

It is qualified to AEC‑Q101 stress tests and is RoHS‑compliant, aligning with automotive component requirements.

What are the expected switching characteristics?

Typical gate charge of 12 nC indicates a modest charge requirement, supporting relatively low driving energy for switching transitions.