Vishay SQ2389CES Type P-Channel Single MOSFETs, -4.1 A, -40 V Enhancement, 3-Pin SOT-23 SQ2389CES-T1_GE3
- N° de stock RS:
- 653-158
- Référence fabricant:
- SQ2389CES-T1_GE3
- Fabricant:
- Vishay
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- N° de stock RS:
- 653-158
- Référence fabricant:
- SQ2389CES-T1_GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -4.1A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | SOT-23 | |
| Series | SQ2389CES | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.094Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Width | 2.64mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -4.1A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type SOT-23 | ||
Series SQ2389CES | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.094Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Width 2.64mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQ2389CES Series Single MOSFETs, 3W Maximum Power Dissipation, -40V Maximum Drain Source Voltage - SQ2389CES-T1_GE3
Features and Benefits:
• 3W power dissipation enables sustained power handling
• Continuous drain current 4.1A supports medium-load switching
• Gate charge 12nC yields efficient switching performance
• Gate-source rating 20V allows robust gate drive margins
• Forward voltage -1.2V minimises voltage drop in conduction
Applications
• Ideal for battery management and protection circuits
• Used with driver ICs in DC power conversion stages
• Can be used for reverse-polarity protection in modules
• Used for compact motor driver low-side or high-side switching
What mounting considerations are required for thermal management?
Which environmental extremes can it withstand during operation?
What polarity and voltage limitations apply to the gate and drain?
How many pins are available and what is the package footprint?
Liens connexes
- Vishay SQ2389CES Type P-Channel Single MOSFETs -40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SQ2389ES-T1_GE3
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay SQ2351CES Type P-Channel Single MOSFETs -20 V Enhancement, 3-Pin SOT-23 SQ2351CES-T1_GE3
- Vishay SQ2361CES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2361CES-T1_GE3
- Vishay SQ3419CEV Type P-Channel Single MOSFETs -40 V Enhancement, 6-Pin SOT-23 SQ3419CEV-T1_GE3
- Vishay SQ2361CEES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2361CEES-T1_GE3
- Vishay SQ2361CES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23

