Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin IRF830ALPBF
- N° de stock RS:
- 180-8307
- Référence fabricant:
- IRF830ALPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
82,80 €
(TVA exclue)
100,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 350 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,656 € | 82,80 € |
| 100 - 200 | 1,557 € | 77,85 € |
| 250 + | 1,408 € | 70,40 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8307
- Référence fabricant:
- IRF830ALPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Width | 10.67 mm | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Width 10.67 mm | ||
Length 9.65mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.4mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Halogen free
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
Liens connexes
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