Vishay Single N-Channel MOSFET, 32 A, 500 V, 3-Pin TO-247AC IRFP32N50KPBF
- N° de stock RS:
- 180-8335
- Référence fabricant:
- IRFP32N50KPBF
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 180-8335
- Référence fabricant:
- IRFP32N50KPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Transistor Configuration | Single | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 32 A | |
| Maximum Drain Source Voltage (Vds) | 500 V | |
| Pin Count | 3 | |
| Package Type | TO-247AC | |
| Automotive Standard | No | |
| Length | 16.25 mm | |
| Maximum Drain Source Resistance (Rds) | 0.16 Ω | |
| Maximum Gate Source Voltage (Vgs) | 30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 460 W | |
| Minimum Operating Temperature | -55 °C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Typical Gate Charge (Qg) @ Vgs | 190 nC | |
| Width | 15.87 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Transistor Configuration Single | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 32 A | ||
Maximum Drain Source Voltage (Vds) 500 V | ||
Pin Count 3 | ||
Package Type TO-247AC | ||
Automotive Standard No | ||
Length 16.25 mm | ||
Maximum Drain Source Resistance (Rds) 0.16 Ω | ||
Maximum Gate Source Voltage (Vgs) 30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 460 W | ||
Minimum Operating Temperature -55 °C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Typical Gate Charge (Qg) @ Vgs 190 nC | ||
Width 15.87 mm | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-247AC-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 160mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 460W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Low RDS (on)
• Operating temperature ranges between -55°C and 150°C
Applications
• Hard switching and high frequency circuits
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
Liens connexes
- Vishay Single IRFP 1 N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247AC IRFP23N50LPBF
- Vishay Single N-Channel Power MOSFET 600 V TO-247AC IRFPC40PBF
- Vishay Single E N-Channel MOSFET 650 V TO-247AC SIHG47N65E-GE3
- Vishay Single N-Channel Power MOSFET 600 V, 3-Pin TO-247AC
- Vishay SiHG32N50D N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247AC SiHG32N50D-GE3
- Vishay SiHG20N50C N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50C-E3
- Vishay E N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247AC SIHG20N50E-GE3
- Vishay N-Channel MOSFET 900 V TO-247AC IRFPF40PBF
