Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3
- N° de stock RS:
- 180-7790
- Référence fabricant:
- SIHP25N50E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
15,07 €
(TVA exclue)
18,235 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,014 € | 15,07 € |
| 50 - 120 | 2,772 € | 13,86 € |
| 125 - 245 | 2,558 € | 12,79 € |
| 250 - 495 | 2,412 € | 12,06 € |
| 500 + | 2,258 € | 11,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7790
- Référence fabricant:
- SIHP25N50E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | E | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 250W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.4mm | |
| Standards/Approvals | RoHS | |
| Height | 6.71mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series E | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 250W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 14.4mm | ||
Standards/Approvals RoHS | ||
Height 6.71mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay Series E Power MOSFET, 500V Drain‑Source Voltage, 26A Continuous Drain Current - SIHP25N50E-GE3
This power MOSFET is an N-channel single transistor in a TO-220AB package designed for high-voltage switching and power conversion tasks. It operates across a wide ambient temperature span and is intended for applications that demand significant power handling and robust gate-drive characteristics.
Features and Benefits:
• 500V drain rating enabling high-voltage switching applications
• 26A continuous drain current for sustained load handling
• 250W maximum power dissipation allowing high-power operation
• 0.145Ω Rds(on) reducing conduction losses under load
• 86nC typical gate charge supporting predictable switching behaviour
• 30V Vgs maximum permitting common gate-drive voltages
• 26A continuous drain current for sustained load handling
• 250W maximum power dissipation allowing high-power operation
• 0.145Ω Rds(on) reducing conduction losses under load
• 86nC typical gate charge supporting predictable switching behaviour
• 30V Vgs maximum permitting common gate-drive voltages
Applications
• Suitable for industrial power supplies and converters
• Ideal for switch-mode power topologies in inverters
• Used for motor-drive circuits requiring 500V capability
• Can be used for high-voltage relay and protection switching
• Used with discrete power stages in high-temperature environments
• Ideal for switch-mode power topologies in inverters
• Used for motor-drive circuits requiring 500V capability
• Can be used for high-voltage relay and protection switching
• Used with discrete power stages in high-temperature environments
What temperature range can it operate within?
It functions across -55°C to 150°C, accommodating cold starts and elevated operating conditions.
How does the package affect thermal management?
The TO-220AB format permits bolting to a heatsink for enhanced thermal dissipation and improved steady-state thermal resistance.
What gate-drive limits should be observed?
Keep the gate-to-source voltage within ±30V to avoid exceeding the device’s gate threshold tolerances.
Is the device configured for multi-chip implementation?
The die contains a single element per chip, so paralleling requires careful current-sharing design.
Liens connexes
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