Vishay Single 1 Type N-Channel Power MOSFET, 3.3 A, 500 V

Sous-total (1 paquet de 5 unités)*

1,38 €

(TVA exclue)

1,67 €

(TVA incluse)

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Dernier stock RS
  • 2 700 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le paquet*
5 +0,276 €1,38 €

*Prix donné à titre indicatif

N° de stock RS:
180-8724
Référence fabricant:
IRFR420APBF
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.3A

Maximum Drain Source Voltage Vds

500V

Maximum Drain Source Resistance Rds

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

Pays d'origine :
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 3ohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 83W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Effective coss specified

• Fully characterized capacitance and avalanche voltage and current

• Halogen and lead (Pb) free component

• Improved gate, avalanche and dynamic dV/dt

• Low gate charge Qg results in simple drive requirement

• Operating temperature ranges between -55°C and 150°

Applications


• High speed power switching

• Switch mode power supply (SMPS)

• Uninterruptible power supplies

Liens connexes

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